Features: · Single Event Effect (SEE) Hardened· Ultra Low RDS(on)· Low Total Gate Charge· Simple Drive Requirements· Ease of Paralleling· Hermetically Sealed· Surface Mount· Ceramic Package· Light WeightSpecifications Parameter Units ID @ VGS = -12V, TC = 25°C Continuous ...
PD-94493A: Features: · Single Event Effect (SEE) Hardened· Ultra Low RDS(on)· Low Total Gate Charge· Simple Drive Requirements· Ease of Paralleling· Hermetically Sealed· Surface Mount· Ceramic Package· Light W...
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Parameter |
Units | ||
ID @ VGS = -12V, TC = 25°C |
Continuous Drain Current |
-47 |
A |
ID @ VGS = -12V, TC =100°C |
Continuous Drain Current |
-30 | |
IDM |
Pulsed Drain Current |
-188 | |
PD @ TC = 25°C |
Max. Power Dissipation |
250 |
W |
Linear Derating Factor |
2.0 |
W/ | |
VGS |
Gate-to-Source Voltage |
±20 |
V |
EAS |
Single Pulse Avalanche Energy |
400 |
mJ |
IAR |
Avalanche Current |
-47 |
A |
EAR |
Repetitive Avalanche Energy |
25 |
mJ |
dV/dt |
Peak Diode Recovery dv/dt |
-10 |
V/ns |
TJ |
Operating Junction |
-55 to 150 |
|
TSTG |
Storage Temperature Range | ||
Pckg. Mounting Surface Temp. |
300 ( for 5s ) | ||
Weight |
3.3 ( Typical ) |
g |
International Rectifier's R5TM technology provides high performance power MOSFETs for space applications. The PD-94493A has been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. The PD-94493A retain all of the well established advantages of OSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.