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PBR951

Features: · Small size· Low noise· Low distortion· High gain· Gold metallization ensures excellent reliability.Application· Communication and instrumentation systems.PinoutSpecifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter - 20 V ...

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SeekIC No. : 004455615 Detail

PBR951: Features: · Small size· Low noise· Low distortion· High gain· Gold metallization ensures excellent reliability.Application· Communication and instrumentation systems.PinoutSpecifications SYMBOL...

PBR951 Data Sheet

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Part Number:
PBR951
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/26

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Product Details

Description



Features:

· Small size
· Low noise
· Low distortion
· High gain
· Gold metallization ensures excellent reliability.


Application

· Communication and instrumentation systems.


Pinout

Connection Diagram


Specifications

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter - 20 V
VCEO collector-emitter voltage open base - 10 V
VEBO emitter-base voltage open collector - 1.5 V
IC collector current (DC)   - 100 A
IC(AV) average collector current   - 100 A
Ptot total power dissipation Ts = 60 °C; note 1 - 365

 mW
Tstg storage temperature   -65 +150 °C
Tj junction temperature   - 175 °C
Note
1. Ts is the temperature at the soldering point of the collector pin.


Description

Silicon NPN transistor PBR951 in a surface mount 3-pin SOT23 package. The transistor is primarily intended for wideband applications in the GHz-range in the RF front end of analog and digital cellular telephones, cordless phones, radar detectors, pagers and satellite TV-tuners.




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