Features: · Small size· Low noise· Low distortion· High gain· Gold metallization ensures excellent reliability.Application· Communication and instrumentation systems.PinoutSpecifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter - 20 V ...
PBR941: Features: · Small size· Low noise· Low distortion· High gain· Gold metallization ensures excellent reliability.Application· Communication and instrumentation systems.PinoutSpecifications SYMBOL...
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Transistors RF Bipolar Small Signal Single NPN 10V 50mA 360mW 100 9GHz
SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
VCBO | collector-base voltage | open emitter | - | 20 | V |
VCEO | collector-emitter voltage | open base | - | 10 | V |
VEBO | emitter-base voltage | open collector | - | 1.5 | V |
IC | collector current (DC) | - | 100 | A | |
IC(AV) | average collector current | - | 100 | A | |
Ptot | total power dissipation | Ts = 60 °C; note 1 | - | 365 |
mW |
Tstg | storage temperature | -65 | +150 | °C | |
Tj | junction temperature | - | 175 | °C |
Silicon NPN transistor PBR941 in a surface mount 3-pin SOT23 package. The transistor is primarily intended for wideband applications in the GHz-range in the RF front end of analog and digital cellular telephones, cordless phones, radar detectors, pagers and satellite TV-tuners.