PBR941B

Features: • Small size• Low noise• Low distortion• High gain• Gold metallization ensures excellent reliability.Application• Communication and instrumentation systems.PinoutSpecifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO ...

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PBR941B Picture
SeekIC No. : 004455614 Detail

PBR941B: Features: • Small size• Low noise• Low distortion• High gain• Gold metallization ensures excellent reliability.Application• Communication and instrumentation syst...

floor Price/Ceiling Price

Part Number:
PBR941B
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/14

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Product Details

Description



Features:

• Small size
• Low noise
• Low distortion
• High gain
• Gold metallization ensures excellent reliability.



Application

• Communication and instrumentation systems.


Pinout

  Connection Diagram


Specifications

SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
-
20
V
VCEO
collector-emitter voltage
open base
-
10
V
VEBO
emitter-base voltage
open collector
-
1.5
V
IC
collector current (DC)
-
50
mA
IC(AV)
average collector current
-
50
A
Ptot
total power dissipation
Tamb  60 °C1
-
360
mW
Tstg
storage temperature
-65
+150
°C
Tj
junction temperature
-
150
°C
1. Ts is the temperature at the soldering point of the collector pin.


Description

Silicon NPN transistor PBR941B in a surface mount 3-pin SOT23 package. The transistor is primarily intended for wideband applications in the GHz range in the RF front end of analog and digital cellular telephones, cordless phones, radar detectors, pagers and satellite TV-tuners.




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