Features: • Small size• Low noise• Low distortion• High gain• Gold metallization ensures excellent reliability.Application• Communication and instrumentation systems.PinoutSpecifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO ...
PBR941B: Features: • Small size• Low noise• Low distortion• High gain• Gold metallization ensures excellent reliability.Application• Communication and instrumentation syst...
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Transistors RF Bipolar Small Signal Single NPN 10V 50mA 360mW 100 9GHz
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT |
VCBO |
collector-base voltage |
open emitter |
- |
20 |
V |
VCEO |
collector-emitter voltage |
open base |
- |
10 |
V |
VEBO |
emitter-base voltage |
open collector |
- |
1.5 |
V |
IC |
collector current (DC) |
- |
50 |
mA | |
IC(AV) |
average collector current |
- |
50 |
A | |
Ptot |
total power dissipation |
Tamb 60 °C1 |
- |
360 |
mW |
Tstg |
storage temperature |
-65 |
+150 |
°C | |
Tj |
junction temperature |
- |
150 |
°C |
Silicon NPN transistor PBR941B in a surface mount 3-pin SOT23 package. The transistor is primarily intended for wideband applications in the GHz range in the RF front end of analog and digital cellular telephones, cordless phones, radar detectors, pagers and satellite TV-tuners.