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P4C1982

Features: `Full CMOS, 6T Cell`High Speed (Equal Access and Cycle Times) 10/12/15/20/25 ns (Commercial) 12/15/20/25/35 ns (Industrial) 15/20/25/35/45 ns (Military)`Low Power Operation (Commercial/Military) 715 mW Active 12/15 550/660 mW Active 20/25/35/45 193/220 mW Standby (TTL Input) 83/110 mW ...

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SeekIC No. : 004439291 Detail

P4C1982: Features: `Full CMOS, 6T Cell`High Speed (Equal Access and Cycle Times) 10/12/15/20/25 ns (Commercial) 12/15/20/25/35 ns (Industrial) 15/20/25/35/45 ns (Military)`Low Power Operation (Commercial/Mil...

P4C1982 Data Sheet

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Part Number:
P4C1982
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

`Full CMOS, 6T Cell
`High Speed (Equal Access and Cycle Times)
10/12/15/20/25 ns (Commercial)
12/15/20/25/35 ns (Industrial)
15/20/25/35/45 ns (Military)
`Low Power Operation (Commercial/Military)
715 mW Active 12/15
550/660 mW Active 20/25/35/45
193/220 mW Standby (TTL Input)
83/110 mW Standby (CMOS Input) P4C1981/1981L
5.5 mW Standby (CMOS Input)
`P4C1981L/82L (Military)
`Output Enable and Dual Chip Enable Functions
`5V ± 10% Power Supply
`Data Retention with 2.0V Supply, 10 mA Typical Current (P4C1981L/1982L (Military)
`Separate Inputs and Outputs
P 4C1981/L Input Data at Outputs during Write
P4C1982/L Outputs in High Z during Write
`Fully TTL Compatible Inputs and Outputs
`Standard Pinout (JEDEC Approved)
28-Pin 300 mil DIP, SOJ
28-Pin 350 x 550 mil LCC




Pinout

Connection Diagram




Specifications

Symbol
 Parameter
Value
Unit
VCC
 Power Supply Pin with Respect to GND
0.5 to +7
V
VTERM
 Terminal Voltage with Respect to GND (up to 7.0V)
0.5 to VCC +0.5
V
TA
 Operating Temperature
55 to +125
°C
TBIAS
 Temperature Under Bias
55 to +125
°C
TSTG
 Storage Temperature
65 to +150
°C
PT
 Power Dissipation
1.0
W
IOUT
 DC Output Current
50
mA





Description

The P4C1981/L and P4C1982/L are 65,536-bit (16Kx4) ultra high-speed static RAMs similar to the P4C198, but with separate data I/O pins. The P4C1981/L feature a transparent write operation when OE is low; the outputs of the P4C1982/L are in high impedance during the write cycle. All devices have low power standby modes. The RAMs operate from a single 5V ± 10% tolerance power supply. With battery backup, data integrity is maintained for supply voltages down to 2.0V. Current drain is typically 10 mA from 2.0V supply.

Access times as fast as 10 nanoseconds are available, permitting greatly enhanced system operating speeds. CMOS is used to reduce power consumption to a low 715 mW active, 193 mW standby. For the P4C1982L and P4C1981L, power is only 5.5 mW standby with CMOS input levels. The P4C1981/L and P4C1982/L are members of a family of PACE RAM™ products offering fast access times.

The P4C1981/L and P4C1982/L are available in 28-pin 300 mil DIP and SOJ, and in 28-pin 350x550 mil LCC packages providing excellent board level densities.






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