Features: `Full CMOS, 6T Cell`High Speed (Equal Access and Cycle Times) 10/12/15/20/25 ns (Commercial) 12/15/20/25/35 ns (Industrial) 15/20/25/35/45 ns (Military)`Low Power Operation (Commercial/Military) 715 mW Active 12/15 550/660 mW Active 20/25/35/45/55 193/220 mW Standby (TTL Input) 83/110 ...
P4C198: Features: `Full CMOS, 6T Cell`High Speed (Equal Access and Cycle Times) 10/12/15/20/25 ns (Commercial) 12/15/20/25/35 ns (Industrial) 15/20/25/35/45 ns (Military)`Low Power Operation (Commercial/Mil...
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Symbol |
Parameter |
Value |
Unit |
VCC |
Power Supply Pin with Respect to GND |
0.5 to +7 |
V |
VTERM |
Terminal Voltage with Respect to GND (up to 7.0V) |
0.5 to VCC +0.5 |
V |
TA |
Operating Temperature |
55 to +125 |
°C |
TBIAS |
Temperature Under Bias |
55 to +125 |
°C |
TSTG |
Storage Temperature |
65 to +150 |
°C |
PT |
Power Dissipation |
1.0 |
W |
IOUT |
DC Output Current |
200 |
mA |
The P4C198/L and P4C198A/L are 65,536-bit ultra highspeed static RAMs organized as 16K x 4. Each device features an active low Output Enable control to eliminate data bus contention. The P4C198/L also have an active low Chip Enable (the P4C198A/L have two Chip Enables, both active low) for easy system expansion. The CMOS memories require no clocks or refreshing and have equal access and cycle times. Inputs are fully TTL-compatible. The RAMs operate from a single 5V ± 10% tolerance power supply. Data integrity is maintained with supply DESCRIPTION voltages down to 2.0V. Current drain is typically 10 mA from a 2.0V supply.
Access times as fast as 12 nanoseconds are available, permitting greatly enhanced system operating speeds. CMOS P4C198/L and P4C198A/L is used to reduce power consumption to a low 715 mW active, 193 mW standby.
The P4C198/L and P4C198A/L are available in 24-pin 300 mil DIP and SOJ, and 28-pin 350 x 550 mil LCC packages providing excellent board level densities.