Features: `Full CMOS, 6T Cell`High Speed (Equal Access and Cycle Times) 10/12/15/20/25 ns (Commercial) 12/15/20/25/35 (Industrial) 15/20/25/35/45 ns (Military)`Low Power (Commercial/Military) 715 mW Active 12/15 550/660 mW Active 20/25/35/45 193/220 mW Standby (TTL Input) 83/110 mW Standb...
P4C188L: Features: `Full CMOS, 6T Cell`High Speed (Equal Access and Cycle Times) 10/12/15/20/25 ns (Commercial) 12/15/20/25/35 (Industrial) 15/20/25/35/45 ns (Military)`Low Power (Commercial/Military) 71...
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Symbol |
Parameter |
Value |
Unit |
VCC |
Power Supply Pin with Respect to GND |
0.5 to +7 |
V |
VTERM |
Terminal Voltage with Respect to GND (up to 7.0V) |
0.5 to VCC +0.5 |
V |
TA |
Operating Temperature |
55 to +125 |
°C |
TBIAS |
Temperature Under Bias |
55 to +125 |
°C |
TSTG |
Storage Temperature |
65 to +150 |
°C |
PT |
Power Dissipation |
1.0 |
W |
IOUT |
DC Output Current |
50 |
mA |
The P4C188 and P4C188L are 65,536-bit ultra high speed static RAMs organized as 16K x 4. The CMOS memories require no clocks or refreshing and have equal access and cycle times. Inputs and outputs are fully TTL-compatible. The RAMs P4C188 and P4C188L operate from a single 5V±10% tolerance power supply. With battery backup, data integrity is maintained for supply voltages down to 2.0V. Current drain is typically 10 mA from a 2.0V supply.
Access times as fast as 12 nanoseconds are available, permitting greatly enhanced system speeds. CMOS is utilized to reduce power consumption to a low 715mW active, 193mW standby and only 5mW in the P4C188L version.
The P4C188 and P4C188L are available in 22-pin 300 mil DIP, 24-pin 300 mil SOJ and 22-pin LCC packages providingexcellent board level densities.