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P4C188

Features: `Full CMOS, 6T Cell`High Speed (Equal Access and Cycle Times) 10/12/15/20/25 ns (Commercial) 12/15/20/25/35 (Industrial) 15/20/25/35/45 ns (Military)`Low Power (Commercial/Military) 715 mW Active 12/15 550/660 mW Active 20/25/35/45 193/220 mW Standby (TTL Input) 83/110 mW Standby (CMOS...

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SeekIC No. : 004439285 Detail

P4C188: Features: `Full CMOS, 6T Cell`High Speed (Equal Access and Cycle Times) 10/12/15/20/25 ns (Commercial) 12/15/20/25/35 (Industrial) 15/20/25/35/45 ns (Military)`Low Power (Commercial/Military) 715 mW...

P4C188 Data Sheet

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Part Number:
P4C188
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

`Full CMOS, 6T Cell
`High Speed (Equal Access and Cycle Times)
10/12/15/20/25 ns (Commercial)
12/15/20/25/35 (Industrial)
15/20/25/35/45 ns (Military)
`Low Power (Commercial/Military)
715 mW Active 12/15
550/660 mW Active 20/25/35/45
193/220 mW Standby (TTL Input)
83/110 mW Standby (CMOS Input) P4C188
15 mW Standby (CMOS Input) (P4C188L Military)
`Single 5V±10% Power Supply
`Data Retention with 2.0V Supply (P4C188L Military)
`Three-State Outputs
`TTL/CMOS Compatible Outputs
`Fully TTL Compatible Inputs
`Standard Pinout (JEDEC Approved)
22-Pin 300 mil DIP
24-Pin 300 mil SOJ
22-Pin 290 x 490 mil LCC




Pinout

Connection Diagram




Specifications

Symbol
 Parameter
Value
Unit
VCC
 Power Supply Pin with Respect to GND
0.5 to +7
V
VTERM
 Terminal Voltage with Respect to GND (up to 7.0V)
0.5 to VCC +0.5
V
TA
 Operating Temperature
55 to +125
°C
TBIAS
 Temperature Under Bias
55 to +125
°C
TSTG
 Storage Temperature
65 to +150
°C
PT
 Power Dissipation
1.0
W
IOUT
 DC Output Current
50
mA





Description

The P4C188 and P4C188L are 65,536-bit ultra high speed static RAMs organized as 16K x 4. The CMOS memories require no clocks or refreshing and have equal access and cycle times. Inputs and outputs are fully TTL-compatible. The RAMs P4C188 and P4C188L operate from a single 5V±10% tolerance power supply. With battery backup, data integrity is maintained for supply voltages down to 2.0V. Current drain is typically 10 mA from a 2.0V supply.

Access times as fast as 12 nanoseconds are available, permitting greatly enhanced system speeds. CMOS is utilized to reduce power consumption to a low 715mW active, 193mW standby and only 5mW in the P4C188L version.

The P4C188 and P4C188L are available in 22-pin 300 mil DIP, 24-pin 300 mil SOJ and 22-pin LCC packages providingexcellent board level densities.






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