Features: `Full CMOS, 6T Cell`High Speed (Equal Access and Cycle Times) 10/12/15/20/25 ns (Commercial) 12/15/20/25/35 ns (Industrial) 15/20/25/35/45 ns (Military)`Low Power Operation 743 mW Active -10 660/770 mW Active for -12/15 550/660 mW Active for -20/25 /35 193/220 mW Standby (TTL Input) 83/1...
P4C187: Features: `Full CMOS, 6T Cell`High Speed (Equal Access and Cycle Times) 10/12/15/20/25 ns (Commercial) 12/15/20/25/35 ns (Industrial) 15/20/25/35/45 ns (Military)`Low Power Operation 743 mW Active -...
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Symbol |
Parameter |
Value |
Unit |
VCC |
Power Supply Pin with Respect to GND |
0.5 to +7 |
V |
VTERM |
Terminal Voltage with Respect to GND (up to 7.0V) |
0.5 to VCC +0.5 |
V |
TA |
Operating Temperature |
55 to +125 |
°C |
TBIAS |
Temperature Under Bias |
55 to +125 |
°C |
TSTG |
Storage Temperature |
65 to +150 |
°C |
PT |
Power Dissipation |
1.0 |
W |
IOUT |
DC Output Current |
50 |
mA |
The P4C187/L are 65, 536-bit ultra high speed static RAMs organized as 64K x 1. The CMOS memories require no clocks or refreshing and have equal access and cycle times. The RAMs P4C187/L operate from a single 5V ± 10% tolerance power supply. Data integrity is maintained for supply voltages down to 2.0V, typically drawing 10mA.
Access times as fast as 10 nanoseconds are available, greatly enhancing system speeds. CMOS reduces power consumption to a low 743mW active, 193/83mW standby for TTL/CMOS inputs and only 5.5 mW standby for the P4C187L.
The P4C187/L are available in 22-pin 300 mil DIP, 24-pin 300 mil SOJ, and 22-pin LCC packages providing excellent board level densities.