P4C1681

Features: ` Full CMOS, 6T Cell` High Speed (Equal Access and Cycle Times) 12/15/20/25 ns (Commercial) 20/25/35ns (P4C1682 Military)` Low Power Operation (Commercial) 715 mW Active 12, 15 550 mW Active 20/25/35 193 mW Standby (TTL Input) 83 mW Standby (CMOS Input)` Single 5V ± 10%Power Supply` Se...

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P4C1681 Picture
SeekIC No. : 004439278 Detail

P4C1681: Features: ` Full CMOS, 6T Cell` High Speed (Equal Access and Cycle Times) 12/15/20/25 ns (Commercial) 20/25/35ns (P4C1682 Military)` Low Power Operation (Commercial) 715 mW Active 12, 15 550 mW Act...

floor Price/Ceiling Price

Part Number:
P4C1681
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/25

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Product Details

Description



Features:

` Full CMOS, 6T Cell
` High Speed (Equal Access and Cycle Times)
12/15/20/25 ns (Commercial)
20/25/35ns (P4C1682 Military)
` Low Power Operation (Commercial)
715 mW Active 12, 15
550 mW Active 20/25/35
193 mW Standby (TTL Input)
83 mW Standby (CMOS Input)
` Single 5V ± 10%Power Supply
` Separate Inputs and Outputs
P4C1681 Input Data at Outputs during Write
P4C1682 Outputs in High Z during Write
` Fully TTL Compatible Inputs and Outputs
` Standard Pinout (JEDEC Approved)
24-Pin 300 mil DIP
24-Pin 300 mil SOIC
24-Pin 300 mil SOJ
24-Pin CERDIP
28-Pin LCC (450 mil x 450 mil)





Pinout

  Connection Diagram




Specifications

Symbol Parameter
Value
Unit
VCC Power Supply Pin with
Respect to GND
0.5 to +7
V
VTERM Terminal Voltage with
Respect to GND (up to 7.0V)
0.5 to VCC +0.5
V
TA Operating Temperature
55 to +125
TBIAS Temperature Under Bias
55 to +125
TSTG Storage Temperature
65 to +150
PT Power Dissipation
1.0
W
IOUT DC Output Current
50
mA





Description

The P4C1681 and P4C1682 are 16,384-bit (4K x 4) ultra high speed static RAMs similar to the P4C168, but with separate data I/O pins. The P4C1681 features a transparent write operation; the outputs of the P4C1682 are in high impedance during the write cycle. All devices have low power standby modes. The RAMs operate from a single 5V ± 10% tolerance power supply.

Access times as fast as 12 nanoseconds are available, permitting greatly enhanced system operating speeds.CMOS is used to reduce power consumption to a low 715 mW active, 193 mW standby. For the P4C1682 and P4C1681, power is only 83 mW standby with CMOS input levels.

The P4C1681 and P4C1682 are available in 24-pin 300 mil DIP and SOIC packages providing excellent board level densities. The P4C1682 is also available in a 28-pin LCC package.






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