Features: ` Full CMOS, 6T Cell` High Speed (Equal Access and Cycle Times) 12/15/20/25 ns (Commercial) 20/25/35ns (P4C1682 Military)` Low Power Operation (Commercial) 715 mW Active 12, 15 550 mW Active 20/25/35 193 mW Standby (TTL Input) 83 mW Standby (CMOS Input)` Single 5V ± 10%Power Supply` Se...
P4C1681: Features: ` Full CMOS, 6T Cell` High Speed (Equal Access and Cycle Times) 12/15/20/25 ns (Commercial) 20/25/35ns (P4C1682 Military)` Low Power Operation (Commercial) 715 mW Active 12, 15 550 mW Act...
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Symbol | Parameter |
Value |
Unit |
VCC | Power Supply Pin with Respect to GND |
0.5 to +7 |
V |
VTERM | Terminal Voltage with Respect to GND (up to 7.0V) |
0.5 to VCC +0.5 |
V |
TA | Operating Temperature |
55 to +125 |
|
TBIAS | Temperature Under Bias |
55 to +125 |
|
TSTG | Storage Temperature |
65 to +150 |
|
PT | Power Dissipation |
1.0 |
W |
IOUT | DC Output Current |
50 |
mA |
The P4C1681 and P4C1682 are 16,384-bit (4K x 4) ultra high speed static RAMs similar to the P4C168, but with separate data I/O pins. The P4C1681 features a transparent write operation; the outputs of the P4C1682 are in high impedance during the write cycle. All devices have low power standby modes. The RAMs operate from a single 5V ± 10% tolerance power supply.
Access times as fast as 12 nanoseconds are available, permitting greatly enhanced system operating speeds.CMOS is used to reduce power consumption to a low 715 mW active, 193 mW standby. For the P4C1682 and P4C1681, power is only 83 mW standby with CMOS input levels.
The P4C1681 and P4C1682 are available in 24-pin 300 mil DIP and SOIC packages providing excellent board level densities. The P4C1682 is also available in a 28-pin LCC package.