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P4C167L

Features: Full CMOS, 6T CellHigh Speed (Equal Access and Cycle Times) 10/12/15/20/25 ns (Commercial) 12/15/20/25/35 ns (Industrial) 15/20/25/35/45 ns (Military)Low Power OperationSingle 5V±10% Power SupplyData Retention with 2.0V Supply (P4C167L Military)Separate Data I/OThree-State OutputTTL Comp...

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SeekIC No. : 004439276 Detail

P4C167L: Features: Full CMOS, 6T CellHigh Speed (Equal Access and Cycle Times) 10/12/15/20/25 ns (Commercial) 12/15/20/25/35 ns (Industrial) 15/20/25/35/45 ns (Military)Low Power OperationSingle 5V±10% Power...

P4C167L Data Sheet

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Part Number:
P4C167L
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

Full CMOS, 6T Cell
High Speed (Equal Access and Cycle Times)
10/12/15/20/25 ns (Commercial)
12/15/20/25/35 ns (Industrial)
15/20/25/35/45 ns (Military)
Low Power Operation
Single 5V±10% Power Supply
Data Retention with 2.0V Supply (P4C167L Military)
Separate Data I/O
Three-State Output
TTL Compatible Output
Fully TTL Compatible Inputs
Standard Pinout (JEDEC Approved)
20-Pin 300 mil DIP
20-Pin 300 mil SOJ
20-Pin LCC


Pinout

Connection Diagram


Specifications

Symbol Parameter Value Unit
VCC Power Supply Pin with Respect to GND 0.5 to +7 V
VTERM Terminal Voltage with Respect to GND (up to 7.0V) 0.5 toVCC +0.5 V
TA Operating Temperature 55 to +125 °C



Description

The P4C167/L are 16,384-bit high speed static RAMs organized as 16K x 1. The CMOS memories require no clocks or refreshing and have equal access and cycle times. The RAMs P4C167/L operate from a single 5V ± 10% tolerance power supply. Data integrity is maintained for supply voltages down to 2.0V, typically drawing 10A.

Access times as fast as 10 nanoseconds are available, greatly enhancing system speeds. CMOS P4C167/L reduces power consumption to low levels.

The P4C167/L are available in 20-pin 300 mil DIP, 20-pin 300 mil SOJ, and 20-pin LCC packages providing excellent board level densities.




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