Features: Full CMOS, 6T CellHigh Speed (Equal Access and Cycle Times) 10/12/15/20/25 ns (Commercial) 12/15/20/25/35 ns (Industrial) 15/20/25/35/45 ns (Military)Low Power OperationSingle 5V±10% Power SupplyData Retention with 2.0V Supply (P4C167L Military)Separate Data I/OThree-State OutputTTL Comp...
P4C167: Features: Full CMOS, 6T CellHigh Speed (Equal Access and Cycle Times) 10/12/15/20/25 ns (Commercial) 12/15/20/25/35 ns (Industrial) 15/20/25/35/45 ns (Military)Low Power OperationSingle 5V±10% Power...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Symbol | Parameter | Value | Unit |
VCC | Power Supply Pin with Respect to GND | 0.5 to +7 | V |
VTERM | Terminal Voltage with Respect to GND (up to 7.0V) | 0.5 toVCC +0.5 | V |
TA | Operating Temperature | 55 to +125 | °C |
The P4C167/L are 16,384-bit high speed static RAMs organized as 16K x 1. The CMOS memories require no clocks or refreshing and have equal access and cycle times. The RAMs P4C167/L operate from a single 5V ± 10% tolerance power supply. Data integrity is maintained for supply voltages down to 2.0V, typically drawing 10A.
Access times as fast as 10 nanoseconds are available, greatly enhancing system speeds. CMOS P4C167/L reduces power consumption to low levels.
The P4C167/L are available in 20-pin 300 mil DIP, 20-pin 300 mil SOJ, and 20-pin LCC packages providing excellent board level densities.