Features: Full CMOS, 6T CellHigh Speed (Equal Access and Cycle Times) 8/10/12/15/20/25/35/70/100 ns (Commercial) 10/12/15/20/25/35/70/100 ns(Industrial) 12/15/20/25/35/45/70/100 ns (Military)Low Power OperationOutput Enable and Dual Chip Enable ControlFunctionsSingle 5V±10% Power SupplyData Retent...
P4C164: Features: Full CMOS, 6T CellHigh Speed (Equal Access and Cycle Times) 8/10/12/15/20/25/35/70/100 ns (Commercial) 10/12/15/20/25/35/70/100 ns(Industrial) 12/15/20/25/35/45/70/100 ns (Military)Low Pow...
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Symbol | Parameter | Value | Unit |
VCC | Power Supply Pin with Respect to GND | 0.5 to +7 | V |
VTERM | Terminal Voltage with Respect to GND (up to 7.0V) | 0.5 to VCC +0.5 | V |
TA | Operating Temperature | 55 to +125 | °C |
The P4C164 is a 65,536-bit ultra high-speed static RAM organized as 8K x 8. The CMOS memory requires no clocks or refreshing and has equal access and cycle times. Inputs are fully TTL-compatible. The RAM P4C164 operates from a single 5V±10% tolerance power supply. With battery backup, data integrity is maintained with supply voltages down to 2.0V. Current drain is typically 10 A from a 2.0V supply.
Access times as fast as 8 nanoseconds are available, permitting greatly enhanced system operating speeds.
The P4C164 is available in 28-pin 300 mil DIP and SOJ, 28- pin 600 mil plastic and ceramic DIP, 28-pin 350 x 550 mil LCC, 32-pin 450 x 550 mil LCC, and 28-pin CERPACK.
The 70ns and 100ns P4C164s are available in the 600 mil plastic DIP.