Features: `Full CMOS, 6T Cell`High Speed (Equal Access and Cycle Times) 10/12/15/20/25 ns (Commercial) 15/20/25/35 ns (Military)`Chip Clear Function`Low Power Operation 713 mW Active 10 ns (Commercial) 550 mW Active 25 ns (Commercial)`Single 5V ± 10% Power Supply`Separate Input and Output Ports`Th...
P4C150: Features: `Full CMOS, 6T Cell`High Speed (Equal Access and Cycle Times) 10/12/15/20/25 ns (Commercial) 15/20/25/35 ns (Military)`Chip Clear Function`Low Power Operation 713 mW Active 10 ns (Commerci...
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Symbol |
Parameter |
Value |
Unit |
VCC |
Power Supply Pin with Respect to GND |
0.5 to +7 |
V |
VTERM |
Terminal Voltage with Respect to GND (up to 7.0V) |
0.5 to VCC +0.5 |
V |
TA |
Operating Temperature |
55 to +125 |
°C |
TBIAS |
Temperature Under Bias |
55 to +125 |
°C |
TSTG |
Storage Temperature |
65 to +150 |
°C |
PT |
Power Dissipation |
1.0 |
W |
IOUT |
DC Output Current |
50 |
mA |
The P4C150 is a 4,096-bit ultra high-speed static RAM organized as 1K x 4 for high speed cache applications. The RAM features a reset control to enable clearing all words to zero within two cycle times. The CMOS memory requires no clocks or refreshing, and has equal access and cycle times. Inputs and outputs are fully TTL-compatible. The RAM P4C150 operates from a single 5V ± 10% tolerance power supply.
Access times as fast as 10 nanoseconds are available permitting greatly enhanced system operating speeds. Time required to reset is only 20 ns for the 10 ns SRAM. CMOS P4C150 is used to reduce power consumption to a low level.
The P4C150 is available in 24-pin 300 mil DIP and SOIC packages providing excellent board level densities. The P4C150 is also available in a 28-pin LCC package as well as a 24-pin FLATPACK for military applications.