Features: `Full CMOS, 6T Cell`High Speed (Equal Access and Cycle Times) 10/12/15/20/25/35 ns (Commercial) 15/20/25/35 ns (Military)`Low Power Operation 633/715 mW Active - 15, 20 550/633 mW Active - 25, 35 193/220 mW Standby (TTL Input)`Output Enable Control Function`Single 5V±10% Power Supply`Com...
P4C116: Features: `Full CMOS, 6T Cell`High Speed (Equal Access and Cycle Times) 10/12/15/20/25/35 ns (Commercial) 15/20/25/35 ns (Military)`Low Power Operation 633/715 mW Active - 15, 20 550/633 mW Active -...
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Symbol |
Parameter |
Value |
Unit |
VCC |
Power Supply Pin with Respect to GND |
0.5 to +7 |
V |
VTERM |
Terminal Voltage with Terminal Voltage with (up to 7.0V) |
0.5 to VCC +0.5 |
V |
TA |
Operating Temperature |
55 to +125 |
°C |
TBIAS |
Temperature Under Bias |
55 to +125 |
°C |
TSTG |
Storage Temperature |
65 to +150 |
°C |
PT |
Power Dissipation |
1.0 |
W |
IOUT |
DC Output Current |
50 |
mA |
The P4C116 is a 16,384-bit ultra high-speed static RAMs organized as 2K x 8. The CMOS memories require no clocks or refreshing and have equal access and cycle times. Inputs of P4C116 are fully TTL-compatible. The RAMs operate from a single 5V±10% tolerance power supply. Current drain is typically 10 mA from a 2.0V supply.
Access times as fast as 10 nanoseconds are available, Means Quality, Service and Speed 1Q97 permitting greatly enhanced system operating speeds. CMOS P4C116 is used to reduce power consumption to a low 633 mW active, 193 mW standby.
The P4C116 is available in 24-pin 300 mil DIP, SOJ and SOIC packages providing excellent board level densities.
The P4C116 is also available in 24-pin rectangular and 28-pin square LCC packages.