OP955

Re verse Break down Volt age. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  .  .  60 V
Stor age and Op er at ing Tem pera ture Range . . . . . . . . . . . . . .  . -40to +100
Lead Sol der ing Tem pera ture
[1/16 inch (1.6 mm) from case for 5 sec. with sol der ingron] . . . . . .  . . . . 260 ⁽¹⁾
Power Dis si pa tion. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mW⁽²⁾

Notes:
(1) RMA flux is recommended. Duration can be extended to 10 sec. max. when flow soldering. Max. 20 grams force may be applied to leads when soldering.
(2) Derate linearly 1.67 mW/  above 25.
(3) Light source is an unfiltered GaAs LED with a peak emission wavelength of 935nm and a radiometric intensity level which varies less than 10% over the entire lens surface of the photodiode being tested.
(4) To calculate typical dark current in mA, use the formula I  = 10(^0.042 T_A ^-1.5) where T_A  is ambient temperature in   .

The OP955 devices consists of a PIN silicon photodiode molded in a clear epoxy package which allows spectral response from visible to infrared wavelengths. The wide receiving angle provides relatively even reception over a large area. The side-looking package is designed for easy PC board mounting. The lensing effect of the package allows an acceptance half angle of 45^o measured from the optical axis to the half  power point. These devices are 100% production tested using infrared light for close correlation with Optek!s GaAs and GaAlAs emitters.