OP950

Re verse Break down Volt age . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  60 V
Storage and Op erating Tem perature Range . . . . . . . . . . . . . . . . . . 40 to +100
Lead Sol dering Tem perature
[1/16 inch (1.6 mm) from case for 5 sec. with sol deringiron]. . . . . .. . . . . . .260⁽¹⁾
Power Dis sipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mW⁽²⁾


Notes:
(1) RMA flux is recommended. Duration can be extended to 10 sec. max. when flow soldering. Max. 20 grams force may be applied to leads when soldering.
(2) Derate linearly 1.67 mW/ above 25.
(3) Light source is an unfiltered GaAs LED with a peak emission wavelength of 935nm and a radiometric intensity level which varies less than 10% over the entire lens surface of the photodiode being tested.
(4) To calculate typical dark current in mA, use the formula ID = 10(0.042 T_A^-1.5) where TA is ambient temperature in

silicon photodiode molded in a clear epoxy package which allows spectral response from visible to infrared light wavelengths. The wide receiving angle povides relatively even reception over a large area. The side-looking package is designed for easy PC board mounting. This photodiode is mechanically and spectrally matched to Optek's GaAs and GaAlAs series of infrared emitting diodes.