NTMSD3P303R2G

MOSFET -30V -3.05A P-Channel

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SeekIC No. : 00162331 Detail

NTMSD3P303R2G: MOSFET -30V -3.05A P-Channel

floor Price/Ceiling Price

Part Number:
NTMSD3P303R2G
Mfg:
ON Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/20

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 3.86 A
Resistance Drain-Source RDS (on) : 85 mOhms Configuration : Single Dual Drain
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SOIC-8 Narrow Packaging : Reel    

Description

Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Package / Case : SOIC-8 Narrow
Configuration : Single Dual Drain
Resistance Drain-Source RDS (on) : 85 mOhms
Continuous Drain Current : 3.86 A


Parameters:

Technical/Catalog InformationNTMSD3P303R2G
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityP-Channel
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C2.34A
Rds On (Max) @ Id, Vgs85 mOhm @ 3.05A, 10V
Input Capacitance (Ciss) @ Vds 750pF @ 24V
Power - Max730mW
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs25nC @ 10V
Package / Case8-SOIC (3.9mm Width)
FET FeatureDiode (Isolated)
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names NTMSD3P303R2G
NTMSD3P303R2G
NTMSD3P303R2GOS ND
NTMSD3P303R2GOSND
NTMSD3P303R2GOS



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