MOSFET -30V -3.05A P-Channel
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Transistor Polarity : | P-Channel | Drain-Source Breakdown Voltage : | 30 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 3.86 A | ||
Resistance Drain-Source RDS (on) : | 85 mOhms | Configuration : | Single Dual Drain | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | SOIC-8 Narrow | Packaging : | Reel |
Technical/Catalog Information | NTMSD3P303R2G |
Vendor | ON Semiconductor |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | P-Channel |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25° C | 2.34A |
Rds On (Max) @ Id, Vgs | 85 mOhm @ 3.05A, 10V |
Input Capacitance (Ciss) @ Vds | 750pF @ 24V |
Power - Max | 730mW |
Packaging | Tape & Reel (TR) |
Gate Charge (Qg) @ Vgs | 25nC @ 10V |
Package / Case | 8-SOIC (3.9mm Width) |
FET Feature | Diode (Isolated) |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | NTMSD3P303R2G NTMSD3P303R2G NTMSD3P303R2GOS ND NTMSD3P303R2GOSND NTMSD3P303R2GOS |