NTMS10P02R2

MOSFET 20V 10A P-Channel

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NTMS10P02R2 Picture
SeekIC No. : 00164867 Detail

NTMS10P02R2: MOSFET 20V 10A P-Channel

floor Price/Ceiling Price

Part Number:
NTMS10P02R2
Mfg:
ON Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/10/30

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : 20 V
Gate-Source Breakdown Voltage : +/- 12 V Continuous Drain Current : 10 A
Resistance Drain-Source RDS (on) : 14 mOhms at 4.5 V Configuration : Single Quad Drain Triple Source
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SOIC-8 Narrow Packaging : Reel    

Description

Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Configuration : Single Quad Drain Triple Source
Drain-Source Breakdown Voltage : 20 V
Continuous Drain Current : 10 A
Package / Case : SOIC-8 Narrow
Gate-Source Breakdown Voltage : +/- 12 V
Resistance Drain-Source RDS (on) : 14 mOhms at 4.5 V


Features:

• Ultra Low RDS(on)
• Higher Efficiency Extending Battery Life
• Logic Level Gate Drive
• Miniature SO8 Surface Mount Package
• Diode Exhibits High Speed, Soft Recovery
• Avalanche Energy Specified
• SO8 Mounting Information Provided



Application

• Power Management in Portable and BatteryPowered Products, i.e.: Cellular and Cordless Telephones and PCMCIA Cards


Pinout

  Connection Diagram


Specifications

Rating Symbol Value Unit
Drain−to−Source Voltage VDSS -20 Vdc
GatetoSource Voltage - Continuous VDGR ±12 Vdc
Thermal Resistance -
JunctiontoAmbient (1.)
Total Power Dissipation @ TA = 25°C (1.)
Continuous Drain Current @ 25°C (1.)
Continuous Drain Current @ 70°C (1.)
Maximum Operating Power Dissipation (2.)
Maximum Operating Drain Current (2.)
Pulsed Drain Current (5.)
RJA
PD
ID
ID
PD
ID
IDM

50
2.5
10
8.0
0.6
5.5
50
Vdc
Thermal Resistance -
JunctiontoAmbient (4.)
Total Power Dissipation @ TA = 25°C (3.)
Continuous Drain Current @ 25°C (3.)
Continuous Drain Current @ 70°C (3.)
Maximum Operating Power Dissipation (4.)
Maximum Operating Drain Current (4.)
Pulsed Drain Current (5.)
RJA
PD
ID
ID
PD
ID
IDM
80
1.6
8.8
6.4
0.4
4.5
44
Adc
Operating and Storage Temperature Range TJ, Tstg −55 to+150 °C
Single Drain−to−Source Avalanche Energy −
Starting TJ = 25°C
(VDD = 100 Vdc, VGS = 10 Vdc,
IL(pk) = 21.6 A, L = 3.0 mH, RG = 25 W)
EAS 500 mJ
Maximum Lead Temperature for Soldering
Purposes, 1/8, from case for 10 seconds
TL 260 °C
1. Mounted onto a 2, square FR4 Board (1, sq. Cu 0.06, thick single sided), t = 10 seconds.
2. Mounted onto a 2, square FR4 Board (1, sq. Cu 0.06, thick single sided), t = steady state.
3. Minimum FR4 or G10 PCB, t = 10 seconds.
4. Minimum FR4 or G10 PCB, t = steady state.
5. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2%.



Parameters:

Technical/Catalog InformationNTMS10P02R2
VendorON Semiconductor (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityP-Channel
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25° C8.8A
Rds On (Max) @ Id, Vgs14 mOhm @ 10A, 4.5V
Input Capacitance (Ciss) @ Vds 3640pF @ 16V
Power - Max1.6W
PackagingCut Tape (CT)
Gate Charge (Qg) @ Vgs70nC @ 4.5V
Package / Case8-SOIC (3.9mm Width)
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names NTMS10P02R2
NTMS10P02R2
NTMS10P02R2OSCT ND
NTMS10P02R2OSCTND
NTMS10P02R2OSCT



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