NTMS10P02R2

Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Configuration : Single Quad Drain Triple Source
Drain-Source Breakdown Voltage : 20 V
Continuous Drain Current : 10 A
Package / Case : SOIC-8 Narrow
Gate-Source Breakdown Voltage : +/- 12 V
Resistance Drain-Source RDS (on) : 14 mOhms at 4.5 V


Features:

• Ultra Low RDS(on)
• Higher Efficiency Extending Battery Life
• Logic Level Gate Drive
• Miniature SO8 Surface Mount Package
• Diode Exhibits High Speed, Soft Recovery
• Avalanche Energy Specified
• SO8 Mounting Information Provided


Application

• Power Management in Portable and BatteryPowered Products, i.e.: Cellular and Cordless Telephones and PCMCIA Cards


Pinout




Specifications

Rating	Symbol	Value	Unit
Drain−to−Source Voltage	VDSS	-20	Vdc
GatetoSource Voltage - Continuous	VDGR	±12	Vdc
Thermal Resistance - JunctiontoAmbient (1.) Total Power Dissipation @ TA = 25°C (1.) Continuous Drain Current @ 25°C (1.) Continuous Drain Current @ 70°C (1.) Maximum Operating Power Dissipation (2.) Maximum Operating Drain Current (2.) Pulsed Drain Current (5.)	RJA PD ID ID PD ID IDM	50 2.5 10 8.0 0.6 5.5 50	Vdc
Thermal Resistance - JunctiontoAmbient (4.) Total Power Dissipation @ TA = 25°C (3.) Continuous Drain Current @ 25°C (3.) Continuous Drain Current @ 70°C (3.) Maximum Operating Power Dissipation (4.) Maximum Operating Drain Current (4.) Pulsed Drain Current (5.)	RJA PD ID ID PD ID IDM	80 1.6 8.8 6.4 0.4 4.5 44	Adc
Operating and Storage Temperature Range	TJ, Tstg	−55 to+150	°C
Single Drain−to−Source Avalanche Energy − Starting TJ = 25°C (VDD = 100 Vdc, VGS = 10 Vdc, IL(pk) = 21.6 A, L = 3.0 mH, RG = 25 W)	EAS	500	mJ
Maximum Lead Temperature for Soldering Purposes, 1/8, from case for 10 seconds	TL	260	°C

1. Mounted onto a 2, square FR4 Board (1, sq. Cu 0.06, thick single sided), t = 10 seconds.
2. Mounted onto a 2, square FR4 Board (1, sq. Cu 0.06, thick single sided), t = steady state.
3. Minimum FR4 or G10 PCB, t = 10 seconds.
4. Minimum FR4 or G10 PCB, t = steady state.
5. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2%.


Parameters:

Technical/Catalog Information	NTMS10P02R2
Vendor	ON Semiconductor (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25° C	8.8A
Rds On (Max) @ Id, Vgs	14 mOhm @ 10A, 4.5V
Input Capacitance (Ciss) @ Vds	3640pF @ 16V
Power - Max	1.6W
Packaging	Cut Tape (CT)
Gate Charge (Qg) @ Vgs	70nC @ 4.5V
Package / Case	8-SOIC (3.9mm Width)
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	NTMS10P02R2 NTMS10P02R2 NTMS10P02R2OSCT ND NTMS10P02R2OSCTND NTMS10P02R2OSCT