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NTMS3P03R2G

MOSFET 30V 3.05A P-Channel

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SeekIC No. : 00160677 Detail

NTMS3P03R2G: MOSFET 30V 3.05A P-Channel

NTMS3P03R2G Data Sheet

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Part Number:
NTMS3P03R2G
Mfg:
ON Semiconductor
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/30

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 3.86 A
Resistance Drain-Source RDS (on) : 85 mOhms Configuration : Single Quad Drain Dual Source
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SOIC-8 Narrow Packaging : Reel    

Description

Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Package / Case : SOIC-8 Narrow
Resistance Drain-Source RDS (on) : 85 mOhms
Configuration : Single Quad Drain Dual Source
Continuous Drain Current : 3.86 A


Parameters:

Technical/Catalog InformationNTMS3P03R2G
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityP-Channel
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C2.34A
Rds On (Max) @ Id, Vgs85 mOhm @ 3.05A, 10V
Input Capacitance (Ciss) @ Vds 750pF @ 24V
Power - Max730mW
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs25nC @ 10V
Package / Case8-SOIC (3.9mm Width)
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names NTMS3P03R2G
NTMS3P03R2G
NTMS3P03R2GOS ND
NTMS3P03R2GOSND
NTMS3P03R2GOS



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