NTMS10P02R2G, US $ .54-.98 , ON Semiconductor, NTMS10P02R2G DataSheet download, circuit diagram from SeekIC.com

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NTMS10P02R2G: MOSFET 20V 10A P-Channel

NTMS10P02R2G Data Sheet

US $ .54~.98 / Piece | Get Latest Price

Part Number:: NTMS10P02R2G
Mfg:: ON Semiconductor
Supply Ability:: 5000

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What is this?

NTMS10P02R2 evaluate
MOSFET 20V 10A P-Channel
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Product Details

Quick Details

Transistor Polarity :	P-Channel	Drain-Source Breakdown Voltage :	20 V
Gate-Source Breakdown Voltage :	+/- 12 V	Continuous Drain Current :	10 A
Resistance Drain-Source RDS (on) :	14 mOhms at 4.5 V	Configuration :	Single Quad Drain Triple Source
Maximum Operating Temperature :	+ 150 C	Mounting Style :	SMD/SMT
Package / Case :	SOIC-8 Narrow	Packaging :	Reel

Description

Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Configuration : Single Quad Drain Triple Source
Drain-Source Breakdown Voltage : 20 V
Continuous Drain Current : 10 A
Package / Case : SOIC-8 Narrow
Gate-Source Breakdown Voltage : +/- 12 V
Resistance Drain-Source RDS (on) : 14 mOhms at 4.5 V

Parameters:

Technical/Catalog Information	NTMS10P02R2G
Vendor	ON Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25° C	10A
Rds On (Max) @ Id, Vgs	14 mOhm @ 10A, 4.5V
Input Capacitance (Ciss) @ Vds	3640pF @ 16V
Power - Max	2.5W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	70nC @ 4.5V
Package / Case	8-SOIC (3.9mm Width)
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	NTMS10P02R2G NTMS10P02R2G NTMS10P02R2GOSTR ND NTMS10P02R2GOSTRND NTMS10P02R2GOSTR

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NTMS10P02R2G

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