NTMSD3P102R2SG

Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 20 V
Package / Case : SOIC-8 Narrow
Configuration : Single Dual Drain
Resistance Drain-Source RDS (on) : 85 mOhms
Continuous Drain Current : 3.86 A


Pinout




Description

The NTMSD3P102R2SG is designed as P-channel enhancement-mode power MOSFET and schottky diode with dual SO-8 package. NTMSD3P102R2SG's typical applications include DC-DC converters, low voltage motor control and power management in portable and battery-powered products.

NTMSD3P102R2SG has six features. The first one is it would have high efficiency components in a single SO-8 package. The second one is it would have high density power MOSFET with low RDS(on), schottky diode with low Vf. The third one is independent pin-outs for MOSFET and schottky die allowing for flexibility in application use. The fourth one is less component placement for board space savings. The fifth one is SO-8 surface mount package, mounting information for SO-8 package provided. The sixth one is Pb-free packages are available. That are all the main features.

Some absolute maximum ratings of NTMSD3P102R2SG have been concluded into several points as follow. Its drain to source voltage would be -20V. Its gate to source voltage continuous would be +/-20V. Its thermal resistance would be 171°C/W for junction to ambient. Its total power dissipation would be 0.73W. Its continuous drain current would be -2.34A at Ta=25°C and would be -1.87A at 70°C. Its pulsed drain current would be -8.0A. Its operating and storage temperature range would be from -55°C to +150°C. Its single pulsed drain to source avalanche energy - starting would be 140mJ. Its maximum lead temperature for soldering purpose, 1/8'' from case for 10 seconds would be 260°C.

Also some MOSFET electrical characteristics about NTMSD3P102R2SG. For OFF characteristics its drain to source breakdown voltage would be min -20Vdc. Its temperature coefficient (positive) would be typ -30mV/°C. Its zeri gate voltage drain current would be max -1.0uAdc at 25°C and would be max -25uAdc at 125°C. Itsgate-body leakage current would be max +/-100nAdc with condition of Vgs=+/-20Vds and Vds=0. And so on. If you have any question or suggestion or want to know more information about NTMSD3P102R2SG please contact us for details. Thank you!