NTMS7N03R2

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Maximum Operating Temperature : + 150 C
Package / Case : SOIC-8 Narrow
Resistance Drain-Source RDS (on) : 23 mOhms
Configuration : Single Quad Drain Dual Source
Continuous Drain Current : 8.5 A


Features:

• Ultra Low RDS(on)
• Higher Efficiency Extending Battery Life
• Logic Level Gate Drive
• Miniature SO-8 Surface Mount Package
• Avalanche Energy Specified
• IDSS Specified at Elevated Temperature


Application

• DC-DC Converters
• Power Management
• Motor Controls
• Inductive Loads
• Replaces MMSF7N03HD, MMSF7N03Z, and MMSF5N03HD in
  Many Applications


Pinout




Specifications

Rating	Symbol	Value	Unit
Drain−to−Source Voltage	VDSS	−30	Vdc
Drain−to−Gate Voltage (RGS = 1.0 m)	VDGR	20	Vdc
Gate−to−Source Voltage − Continuous	VGS	±12	Vdc
Drain Current - Continuous @ TA = 25°C Drain Current - Continuous @ TA = 70°C Drain Current - Pulsed (Note 4)	ID ID IDM	8.5 6.8 25	Adc Apk
Thermal Resistance − Junction−to−Ambient (Note 2)	RJA	85	°C/W W A A A
Total Power Dissipation @ TA = 25°C	PD	1.47	Watts
Drain Current - Continuous @ TA = 25°C Drain Current - Continuous @ TA = 70°C Drain Current - Pulsed (Note 4)	ID ID IDM	6.5 5.2 18	°C/W W A A A
Thermal Resistance − Junction−to−Ambient (Note 3)	RJA	156	°C/W
Total Power Dissipation @ TA = 25°C	PD	0.8	Watts
Drain Current - Continuous @ TA = 25°C Drain Current - Continuous @ TA = 70°C Drain Current - Pulsed (Note 4)	ID ID IDM	4.8 3.8 14	Adc
Operating and Storage Temperature Range	TJ, Tstg	−55 to +150	°C
Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C (VDD = −30 Vdc, VGS = −4.5 Vdc, Peak IL = −7.5 Apk, L = 5 mH, RG = 25 W)	EAS	288	mJ

1. 2, SQ. FR-4 PCB mounting, (2 oz. Cu 0.06, thick single sided), 10 Sec. Max.
2. 2, SQ. FR-4 PCB mounting, (2 oz. Cu 0.06, thick single sided), t = steady state.
3. Minimum FR4 or G10 PCB, t = steady state.
4. Pulse test: Pulse Width = 300 ms, Duty Cycle = 2%.


Parameters:

Technical/Catalog Information	NTMS7N03R2
Vendor	ON Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	4.8A
Rds On (Max) @ Id, Vgs	23 mOhm @ 7A, 10V
Input Capacitance (Ciss) @ Vds	1190pF @ 25V
Power - Max	800mW
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	43nC @ 10V
Package / Case	8-SOIC (3.9mm Width)
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	NTMS7N03R2 NTMS7N03R2 NTMS7N03R2OS ND NTMS7N03R2OSND NTMS7N03R2OS