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NTMS5P02R2G

MOSFET -20V -5.4A P-Channel

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SeekIC No. : 00146580 Detail

NTMS5P02R2G: MOSFET -20V -5.4A P-Channel

NTMS5P02R2G Data Sheet

floor Price/Ceiling Price

US $ .23~.45 / Piece | Get Latest Price
Part Number:
NTMS5P02R2G
Mfg:
ON Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~500
  • Unit Price
  • $.45
  • $.38
  • $.27
  • $.23
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/11/23

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : 20 V
Gate-Source Breakdown Voltage : +/- 10 V Continuous Drain Current : 7.05 A
Resistance Drain-Source RDS (on) : 33 mOhms at 4.5 V Configuration : Single Quad Drain Dual Source
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SOIC-8 Narrow Packaging : Reel    

Description

Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 20 V
Package / Case : SOIC-8 Narrow
Gate-Source Breakdown Voltage : +/- 10 V
Configuration : Single Quad Drain Dual Source
Continuous Drain Current : 7.05 A
Resistance Drain-Source RDS (on) : 33 mOhms at 4.5 V


Parameters:

Technical/Catalog InformationNTMS5P02R2G
VendorON Semiconductor (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityP-Channel
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25° C3.95A
Rds On (Max) @ Id, Vgs33 mOhm @ 5.4A, 4.5V
Input Capacitance (Ciss) @ Vds 1900pF @ 16V
Power - Max790mW
PackagingCut Tape (CT)
Gate Charge (Qg) @ Vgs35nC @ 4.5V
Package / Case8-SOIC (3.9mm Width)
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names NTMS5P02R2G
NTMS5P02R2G
NTMS5P02R2GOSCT ND
NTMS5P02R2GOSCTND
NTMS5P02R2GOSCT



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