MOSFET -20V -5.4A P-Channel
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Transistor Polarity : | P-Channel | Drain-Source Breakdown Voltage : | 20 V | ||
Gate-Source Breakdown Voltage : | +/- 10 V | Continuous Drain Current : | 7.05 A | ||
Resistance Drain-Source RDS (on) : | 33 mOhms at 4.5 V | Configuration : | Single Quad Drain Dual Source | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | SOIC-8 Narrow | Packaging : | Reel |
Technical/Catalog Information | NTMS5P02R2 |
Vendor | ON Semiconductor |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | P-Channel |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25° C | 3.95A |
Rds On (Max) @ Id, Vgs | 33 mOhm @ 5.4A, 4.5V |
Input Capacitance (Ciss) @ Vds | 1900pF @ 16V |
Power - Max | 790mW |
Packaging | Tape & Reel (TR) |
Gate Charge (Qg) @ Vgs | 35nC @ 4.5V |
Package / Case | 8-SOIC (3.9mm Width) |
FET Feature | Logic Level Gate |
Drawing Number | * |
Lead Free Status | Contains Lead |
RoHS Status | RoHS Non-Compliant |
Other Names | NTMS5P02R2 NTMS5P02R2 NTMS5P02R2OS ND NTMS5P02R2OSND NTMS5P02R2OS |