MOSFET 20V 4.2A N-Channel
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 20 V | ||
Gate-Source Breakdown Voltage : | +/- 10 V | Continuous Drain Current : | 5.9 A | ||
Resistance Drain-Source RDS (on) : | 40 mOhms at 4.5 V | Configuration : | Single Quad Drain Dual Source | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | SOIC-8 Narrow | Packaging : | Reel |
Technical/Catalog Information | NTMS4N01R2G |
Vendor | ON Semiconductor |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25° C | 3.3A |
Rds On (Max) @ Id, Vgs | 40 mOhm @ 4.2A, 4.5V |
Input Capacitance (Ciss) @ Vds | 1200pF @ 10V |
Power - Max | 770mW |
Packaging | Tape & Reel (TR) |
Gate Charge (Qg) @ Vgs | 16nC @ 4.5V |
Package / Case | 8-SOIC (3.9mm Width) |
FET Feature | Logic Level Gate |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | NTMS4N01R2G NTMS4N01R2G NTMS4N01R2GOS ND NTMS4N01R2GOSND NTMS4N01R2GOS |