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NTMS4800NR2G

MOSFET 30V 8A 0.020OHM N-CH

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SeekIC No. : 00147659 Detail

NTMS4800NR2G: MOSFET 30V 8A 0.020OHM N-CH

NTMS4800NR2G Data Sheet

floor Price/Ceiling Price

US $ .13~.14 / Piece | Get Latest Price
Part Number:
NTMS4800NR2G
Mfg:
ON Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $.14
  • $.14
  • $.13
  • $.13
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/12/30

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 8 A
Resistance Drain-Source RDS (on) : 20 mOhms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SOIC-8 Narrow Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Maximum Operating Temperature : + 150 C
Resistance Drain-Source RDS (on) : 20 mOhms
Package / Case : SOIC-8 Narrow
Continuous Drain Current : 8 A


Parameters:

Technical/Catalog InformationNTMS4800NR2G
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C4.9A
Rds On (Max) @ Id, Vgs20 mOhm @ 7.5A, 10V
Input Capacitance (Ciss) @ Vds 940pF @ 25V
Power - Max750mW
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs7.7nC @ 4.5V
Package / Case8-SOIC
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names NTMS4800NR2G
NTMS4800NR2G



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