Features: • High Density Power MOSFET with Ultra Low RDS(on) for Higher Efficiency• Miniature SO−8 Surface Mount Package Saving Board Space• IDSS Specified at Elevated Temperature• Diode Exhibits High Speed, Soft RecoveryApplication• Power Management for Battery...
NTMS4404N: Features: • High Density Power MOSFET with Ultra Low RDS(on) for Higher Efficiency• Miniature SO−8 Surface Mount Package Saving Board Space• IDSS Specified at Elevated Temper...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Parameter | Symbol | Value | Units | ||
Drain−to−Source Voltage | VDSS | 30 | V | ||
Gate−to−Source Voltage | VGS | ±20 | V | ||
Continuous Drain Current (Note 1) |
Steady State |
TA = 25 °C | ID | 9.6 | mA |
TA = 70°C | 7.6 | ||||
tp10 s | TA = 25 °C | 12 | |||
Power Dissipation (Note 1) |
Steady State | Pd | 1.56 | W | |
tp10 s | 2.5 | ||||
Continuous Drain Current (Note 2) |
Steady State |
TA = 25 °C | ID | 7.0 | A |
TA = 70 °C | 5.6 | ||||
Power Dissipation (Note 2) |
TA = 25 °C | Pd | 0.83 | W | |