Features: • Ultra Low RDS(on) (at 4.5 VGS), Low Gate Resistance and Low QG• Optimized for Low Side Synchronous Applications• High Speed Switching CapabilityApplication• Notebook Computer Vcore Applications• Network Applications• DC−DC ConvertersPinoutSpeci...
NTMS4107N: Features: • Ultra Low RDS(on) (at 4.5 VGS), Low Gate Resistance and Low QG• Optimized for Low Side Synchronous Applications• High Speed Switching CapabilityApplication• Noteb...
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Parameter | Symbol | Value | Units | ||
Drain−to−Source Voltage | VDSS | 30 | V | ||
Gate−to−Source Voltage | VGS | ±20 | V | ||
Continuous Drain Current (Note 1) |
Steady State |
TA = 25 °C | ID | 15 | mA |
TA = 70°C | 11 | ||||
tp10 s | TA = 25 °C | 18 | |||
Power Dissipation (Note 1) |
Steady State | TA = 25 °C | Pd | 1.67 | W |
tp10 s | 2.5 | ||||
Continuous Drain Current (Note 2) |
Steady State |
TA = 25 °C | ID | 11 | A |
TA = 70 °C | 8.0 | ||||
Power Dissipation (Note 2) |
TA = 25 °C | Pd | 0.93 | W | |
Pulsed Drain Current | tp = 10 s | IDM | 56 | A | |
Operating Junction and Storage Temperature | TJ, Tstg | −55 to 150 |
°C | ||
Source Current (Body Diode) | Ls | 3.0 | mA | ||
Single Pulse Drain−to−Source Avalanche Energy (VDD = 30 V, VGS = 10 V, IPK = 42 A, L = 1 mH, RG = 25 ) |
EAS | 880 | mJ | ||
Lead Temperature for Soldering Purposes (1/8" from case for 10 s) |
TL | 260 | °C |