NTMS4101PR2

MOSFET P-CH 20V 6.9A 8-SOIC

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SeekIC No. : 003433822 Detail

NTMS4101PR2: MOSFET P-CH 20V 6.9A 8-SOIC

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US $ .2~.2 / Piece | Get Latest Price
Part Number:
NTMS4101PR2
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 0~2500
  • Unit Price
  • $.2
  • Processing time
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Quick Details

Series: - Manufacturer: ON Semiconductor
FET Type: MOSFET P-Channel, Metal Oxide Transistor Type: -
Current - Collector (Ic) (Max): - FET Feature: Logic Level Gate
Continuous Drain Current : 15 A Drain to Source Voltage (Vdss): 20V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 6.9A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 19 mOhm @ 6.9A, 4.5V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 450mV @ 250µA Gate Charge (Qg) @ Vgs: 32nC @ 4.5V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 3200pF @ 10V
Power - Max: 1.38W Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOICN    

Description

Series: -
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET P-Channel, Metal Oxide
Vgs(th) (Max) @ Id: 450mV @ 250µA
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOICN
Gate Charge (Qg) @ Vgs: 32nC @ 4.5V
Current - Continuous Drain (Id) @ 25° C: 6.9A
Manufacturer: ON Semiconductor
Input Capacitance (Ciss) @ Vds: 3200pF @ 10V
Power - Max: 1.38W
Rds On (Max) @ Id, Vgs: 19 mOhm @ 6.9A, 4.5V


Parameters:

Technical/Catalog InformationNTMS4101PR2
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityP-Channel
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25° C6.9A
Rds On (Max) @ Id, Vgs19 mOhm @ 6.9A, 4.5V
Input Capacitance (Ciss) @ Vds 3200pF @ 10V
Power - Max1.38W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs32nC @ 4.5V
Package / Case8-SOIC (3.9mm Width)
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names NTMS4101PR2
NTMS4101PR2
NTMS4101PR2OS ND
NTMS4101PR2OSND
NTMS4101PR2OS



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