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NTB65N02R

MOSFET 24V 65A N-Channel

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SeekIC No. : 00164944 Detail

NTB65N02R: MOSFET 24V 65A N-Channel

NTB65N02R Data Sheet

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Part Number:
NTB65N02R
Mfg:
ON Semiconductor
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 25 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 65 A
Resistance Drain-Source RDS (on) : 10.5 mOhms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : D2PAK Packaging : Tube    

Description

Transistor Polarity : N-Channel
Drain-Source Breakdown Voltage : 25 V
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Package / Case : D2PAK
Maximum Operating Temperature : + 150 C
Packaging : Tube
Resistance Drain-Source RDS (on) : 10.5 mOhms
Continuous Drain Current : 65 A


Features:

• Planar HD3e Process for Fast Switching Performance
• Low RDSon to Minimize Conduction Loss
• Low Ciss to Minimize Driver Loss
• Low Gate Charge
• Fast Switching


Specifications

Rating Symbol Value Unit
DraintoSource Voltage VDSS 24 Vdc
GatetoSource Voltage Continuous VGS ±20 Vdc
Drain Current (Continuous @ TA = 25°C (Note 3)
Single Pulse (tp = 10 s)		 ID
IDM		 65
160		 A
A
Total Power Dissipation @ TA = 25°C PD 78 W
Operating and Storage Temperature TJ and
Tstg		 55 to
150		 °C
Single Pulse Drainto Source Avalanche
Energy Starting TJ=25°C
(VDD = 50 Vdc, VGS = 5 Vdc, IL = Apk, L = 1 mH,
RG = 25 )		 EAS TBD mJ
Thermal Resistance JunctiontoCase
JunctiontoAmbient (Note 1)
JunctiontoAmbient (Note 2)		 RJC
RJA
RJA		 1.6
67
120		 °C/W
Maximum Lead Temperature for Soldering
Purposes, 1/8" from Case for 10 Seconds		 TL 260 °C



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