MOSFET 60V 60A N-Channel
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 60 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 60 A | ||
Resistance Drain-Source RDS (on) : | 14 mOhms | Configuration : | Single | ||
Maximum Operating Temperature : | + 175 C | Mounting Style : | SMD/SMT | ||
Package / Case : | D2PAK | Packaging : | Tube |
• Pb−Free Packages are Available
Rating | Symbol | Value | Unit |
Drain−to−Source Voltage | VDSS | 60 | Vdc |
Drain−to−Gate Voltage (RGS = 10 M) | VDGR | 60 | Vdc |
Gate−to−Source Voltage − Continuous − Non−Repetitive (tp10 ms) |
VGS VGS |
±20 ±30 |
Vdc |
Drain Current − Continuous @ TA = 25 − Continuous @ TA = 100 − Single Pulse (tp10 µs) |
ID ID IDM |
60 42.3 180 |
Adc Apk |
Total Power Dissipation @ TA = 25 Derate above 25 Total Power Dissipation @ TA = 25(Note 1) |
PD | 150 1.0 2.4 |
W W/ W |
Operating and Storage Temperature Range | TJ, Tstg | −55 to +175 |
|
Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25 (VDD = 75 Vdc, VGS = 10 Vdc, L = 0.3 mH IL(pk) = 55 A, VDS = 60 Vdc) |
EAS | 454 | mJ |
Thermal Resistance − Junction−to−Case − Junction−to−Ambient (Note 1) |
RJC RJA |
1.0 62.5 |
/W |
Maximum Lead Temperature for Soldering Purposes, 1/8, from case for 10 seconds |
TL | 260 |