NTB60N06L

Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Package / Case : D2PAK
Packaging : Tube
Gate-Source Breakdown Voltage : +/- 15 V
Drain-Source Breakdown Voltage : 60 V
Continuous Drain Current : 60 A
Resistance Drain-Source RDS (on) : 16 mOhms at 5 V


Features:

• Pb−Free Packages are Available


Application

• Power Supplies
• Converters
• Power Motor Controls
• Bridge Circuits


Specifications

Rating	Symbol	Value	Unit
Drain−to−Source Voltage	VDSS	60	Vdc
Drain−to−Gate Voltage (RGS = 10 M )	VDGR	60	Vdc
Gate−to−Source Voltage − Continuous − Non−Repetitive (tp10 ms)	V GS V GS	±15 ±20	Vdc
Drain Current − Continuous @ TA = 25°C − Continuous @ TA 100°C − Single Pulse (tp10 s)	I D I D I DM	60 42.3 180	Adc Apk
Total Power Dissipation @ TA = 25°C Derate above 25°C Total Power Dissipation @ TA = 25°C (Note 1)	PD	150 1.0 2.4	W W/°C W
Operating and Storage Temperature Range	TJ, Tstg	−55 to 175	°C
Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C (VDD = 75 Vdc, VGS = 5.0 Vdc, L = 0.3 mH, I L(pk) = 55 A,VDS = 60 Vdc)	EAS	454	mJ
Thermal Resistance, − Junction−to−Case − Junction−to−Ambient (Note 1)	RJC RJA	1.0 62.5	°C/W
Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 10 seconds	TL	260	°C

Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.
1. When surface mounted to an FR4 board using the minimum recommended pad size, (Cu Area 0.412 in ²).

Description

NTB60N06L Designed for low voltage, high speed switching applications in power supplies, converters, power motor controls and bridge circuits.