NTB125N02RT4G

MOSFET 24V 125A N-Channel

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SeekIC No. : 00163467 Detail

NTB125N02RT4G: MOSFET 24V 125A N-Channel

floor Price/Ceiling Price

Part Number:
NTB125N02RT4G
Mfg:
ON Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 24 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 18.6 A
Resistance Drain-Source RDS (on) : 4.6 mOhms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : D2PAK Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Package / Case : D2PAK
Maximum Operating Temperature : + 150 C
Resistance Drain-Source RDS (on) : 4.6 mOhms
Drain-Source Breakdown Voltage : 24 V
Continuous Drain Current : 18.6 A


Parameters:

Technical/Catalog InformationNTB125N02RT4G
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)24V
Current - Continuous Drain (Id) @ 25° C15.9A
Rds On (Max) @ Id, Vgs4.6 mOhm @ 20A, 10V
Input Capacitance (Ciss) @ Vds 3440pF @ 20V
Power - Max1.98W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs28nC @ 4.5V
Package / CaseD²Pak, SMD-220, TO-263 (2 leads + tab)
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names NTB125N02RT4G
NTB125N02RT4G
NTB125N02RT4GOS ND
NTB125N02RT4GOSND
NTB125N02RT4GOS



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