NN5118160

The NN5118160 is a high performance CMOS dynamic access memory organized as 1048576 words by 16-bit.The outputs are tri-stated by CAS which,in essence,acts as an output enable independent of RAS with very fast CAS to output access time.

Features of the NN5118160 are:(1)1048576 * 16 bit organization;(2)single power operation (5V±10%);(3)performance ranges;(4)fast page mode operation;(5)separate CAS for byte selection;(6)byte read/write mode operation;(7)low power operation;(8)1024 refresh cycles;(9)self refresh mode;(10)all inputs and clocks fully TTL and CMOS compatible;(11)refresh modes;(12)high reliability package.

The absolute maximum ratings of the NN5118160 can be summarized as:(1):the parameter is voltage on any pin retative to VSS,the symbol is Vin,Vout,the value is -1 to 7,the unit is V;(2):the parameter is voltage on VCC relative to VSS,the symbol is VCC,the value is -1 to 7,the unit is V;(3):the parameter is storage temperature,the symbol is Tstg,the value is -55 to +125,the unit is ;(4):the parameter is power dissipation,the symbol is Pd,the value is 1.0,the unit is W;(5):the parameter is ambient operation temperature,the symbol is Ta,the value is 0 to +70,the unit is ;(6):the parameter is short circuit output current,the symbol is Iout,the value is 50,the unit is mA.