NDP608B

Features: `36 and 32A, 80V. RDS(ON) = 0.042and 0.045.`Critical DC electrical parameters specified at elevated temperature.`Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.`175°C maximum junction temperature rating.`High density cell design...

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SeekIC No. : 004433273 Detail

NDP608B: Features: `36 and 32A, 80V. RDS(ON) = 0.042and 0.045.`Critical DC electrical parameters specified at elevated temperature.`Rugged internal source-drain diode can eliminate the need for an external Z...

floor Price/Ceiling Price

Part Number:
NDP608B
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/1/9

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Product Details

Description



Features:

`36 and 32A, 80V. RDS(ON) = 0.042and 0.045.
`Critical DC electrical parameters specified at elevated temperature.
`Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
`175°C maximum junction temperature rating.
`High density cell design (3 million/in²) for extremely low RDS(ON).
`TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications.



Specifications

Symbol
Parameter
NDP608A NDP608AE
NDB608A NDB608AE
NDP608B NDP608BE
NDB608B NDB608BE
Units
VDSS
Drain-Source Voltage
80
V
VDGR
Drain-Gate Voltage (RGS 1 M)
80
V
VGSS
Gate-Source Voltage - Continuous
- Nonrepetitive (tP < 50 s)
± 20
V
± 40
ID
Drain Current - Continuous
- Pulsed
36
32
A
144
128
PD
Total Power Dissipation
Derate above 25°C
100
W
0.67
W/
TJ,TSTG
Operating and Storage Temperature Range
-65 to 175
TL
Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds
275



Description

These N-channel enhancement mode power field effect transistors NDP608B are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. NDP608B is particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.




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