NDP6030L

Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Drain-Source Breakdown Voltage : 30 V
Mounting Style : Through Hole
Packaging : Tube
Package / Case : TO-220
Gate-Source Breakdown Voltage : +/- 16 V
Continuous Drain Current : 52 A
Resistance Drain-Source RDS (on) : 0.037 Ohms


Features:

`52 A, 30 V. R<sub>DS(ON)</sub> = 0.0135 @ V<sub>GS</sub>=10 V
                     R<sub>DS(ON)</sub> = 0.020 @ V<sub>GS</sub>=4.5 V.
`Critical DC electrical parameters specified at elevated temperature.
`Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
`High density cell design for extremely low R_DS(ON).
`175°C maximum junction temperature rating.


Specifications

Symbol	Parameter	NDP603AL	NDB603AL	Units
VDSS	Drain-Source Voltage	30		V
VGSS	Gate-Source Voltage - Continuous	± 16		V
ID	Drain Current - Continuous - Pulsed	52		A
		156
PD	Total Power Dissipation @ TC = 25°C Derate above 25°C	75		W
		0.5		W/
TJ,TSTG	Operating and Storage Temperature Range	-65 to 175
TL	Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds	275

Description

These N-Channel logic level enhancement mode power field effect transistors NDP6030L are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. NDP6030L is particularly suited for low voltage applications such as DC/DC converters and high efficiency switching circuits where fast switching, low in-line power loss, and resistance to transients are needed.