NDP6020

Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Drain-Source Breakdown Voltage : 20 V
Package / Case : TO-220
Gate-Source Breakdown Voltage : +/- 8 V
Continuous Drain Current : 35 A
Resistance Drain-Source RDS (on) : 0.023 Ohms
Packaging : Rail


Features:

`35 A, 20 V. R<sub>DS(ON)</sub> = 0.023 @ V<sub>GS</sub>= 4.5 V
                     R<sub>DS(ON)</sub> = 0.028 @ V<sub>GS</sub>= 2.7 V.
`Critical DC electrical parameters specified at elevated temperature.
`Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
`175°C maximum junction temperature rating.
`High density cell design for extremely low R<sub>DS(ON)</sub>.
`TO-220 and TO-263 (D²PAK) package for both through hole and surface mount applications.


Specifications

Symbol	Parameter	NDP6020	NDB6020	Units
VDSS	Drain-Source Voltage	20		V
VDGR	Drain-Gate Voltage (RGS 1 M)	20		V
VGSS	Gate-Source Voltage - Continuous	±8		V
ID	Drain Current - Continuous - Pulsed	35		A
		100
PD	Total Power Dissipation @ TC = 25°C Derate above 25°C	60		W
		0.4		W/
TJ,TSTG	Operating and Storage Temperature Range	-65 to 175

Description

These logic level N-Channel enhancement mode power field effect transistors NDP6020 are produced using National's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. NDP6020 is particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.