Position: Home  > All Categories> Integrated Circuits (ICs) > NDP6050L

NDP6050L

Features: `48A, 50V. RDS(ON) = 0.025 @ VGS = 5V.`Low drive requirements allowing operation directly from logic drivers. VGS(TH) < 2.0V.`Critical DC electrical parameters specified at elevated temperature.`Rugged internal source-drain diode can eliminate the need for an external Zener diode tran...

product image

NDP6050L Picture
See larger image
SeekIC No. : 004433269 Detail

NDP6050L: Features: `48A, 50V. RDS(ON) = 0.025 @ VGS = 5V.`Low drive requirements allowing operation directly from logic drivers. VGS(TH) < 2.0V.`Critical DC electrical parameters specified at elevated tem...

NDP6050L Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
NDP6050L
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2025/1/9

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

`48A, 50V. RDS(ON) = 0.025 @ VGS = 5V.
`Low drive requirements allowing operation directly from logic drivers. VGS(TH) < 2.0V.
`Critical DC electrical parameters specified at elevated temperature.
`Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
`175°C maximum junction temperature rating.
`High density cell design for extremely low RDS(ON).
`TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications.


Specifications

Symbol
Parameter
NDP6050L
NDB6050L
Units
VDSS Drain-Source Voltage
50
V
VDGR Drain-Gate Voltage (RGS < 1 M)
50
V
VDSS Gate-Source Voltage - Continuous
- Nonrepetitive (tP < 50 µs)
± 16
V
± 25
ID Drain Current - Continuous
- Pulsed
48
A
144
PD Total Power Dissipation @ TC = 25°C
Derate above 25°C
100
W
0.67
W/
TJ,TSTG Operating and Storage Temperature
-65 to 175
TL Maximum lead temperature for soldering
purposes, 1/8" from case for 5 seconds
275



Description

These logic level N-Channel enhancement mode power field effect transistors NDP6050L are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. NDP6050L is particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
RF and RFID
X3C26P1-30S
1P620S
Potentiometers, Variable Resistors
RV24YN
WXD4-23-3W
Memory Cards, Modules
WT32
VTL5C7
Prototyping Products
AVT4168
DE1
Line Protection, Backups
BX0023
A20B-1008-0550
Discrete Semiconductor Products
T508N12TOF
MUR20040
View more