NDP6050

Packaging :
Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Package / Case : TO-220
Resistance Drain-Source RDS (on) : 0.025 Ohms
Drain-Source Breakdown Voltage : 50 V
Continuous Drain Current : 48 A


Features:

`48A, 50V. R<sub>DS(ON)</sub> = 0.025 @ V<sub>GS</sub>=10V.
`Critical DC electrical parameters specified at elevated temperature.
`Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
`175°C maximum junction temperature rating.
`High density cell design for extremely low R<sub>DS(ON)</sub>.
`TO-220 and TO-263 (D²PAK) package for both through hole and surface mount applications.

Specifications

Symbol	Parameter	NDP6050	NDB6050	Units
VDSS	Drain-Source Voltage	50		V
VDGR	Drain-Gate Voltage (RGS 1 M)	50		V
VGSS	Gate-Source Voltage - Continuous - Nonrepetitive (tP < 50 s)	± 20		V
		± 40
ID	Drain Current - Continuous - Pulsed	48		A
		144
PD	Total Power Dissipation @ TC = 25°C Derate above 25°C	100		W
		0.67		W/
TJ,TSTG	Operating and Storage Temperature Range	-65 to 175
TL	Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds	275

Description

These N-Channel enhancement mode power field effect transistors NDP6050 are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. NDP6050 is particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.