NDP603AL

MOSFET N-Channel FET LL Enhancement

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SeekIC No. : 00165070 Detail

NDP603AL: MOSFET N-Channel FET LL Enhancement

floor Price/Ceiling Price

Part Number:
NDP603AL
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/1/9

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 25 A
Resistance Drain-Source RDS (on) : 0.022 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-220 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Drain-Source Breakdown Voltage : 30 V
Mounting Style : Through Hole
Packaging : Tube
Package / Case : TO-220
Continuous Drain Current : 25 A
Resistance Drain-Source RDS (on) : 0.022 Ohms


Features:

`25A, 30V. RDS(ON) = 0.022 @ VGS=10V.
`Critical DC electrical parameters specified at elevated temperature.
`Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
`High density cell design for extremely low RDS(ON).
`175°C maximum junction temperature rating.




Specifications

Symbol
Parameter
NDP603AL
NDB603AL
Units
VDSS Drain-Source Voltage
30
V
VGSS Gate-Source Voltage - Continuous
± 20
V
ID Drain Current - Continuous
- Pulsed
25 (Note 1)
A
100
PD Total Power Dissipation @ TC = 25°C
Derate above 25°C
50
W
0.4
W/
TJ,TSTG Operating and Storage Temperature Range
-65 to 175
TL Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
275



Description

These N-Channel logic level enhancement mode power field effect transistors NDP603AL are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. NDP603AL is particularly suited for low voltage applications such as DC/DC converters and high efficiency switching circuits where fast switching, low in-line power loss, and resistance to transients are needed.




Parameters:

Technical/Catalog InformationNDP603AL
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C25A
Rds On (Max) @ Id, Vgs22 mOhm @ 25A, 10V
Input Capacitance (Ciss) @ Vds 1100pF @ 15V
Power - Max50W
PackagingTube
Gate Charge (Qg) @ Vgs40nC @ 10V
Package / CaseTO-220AB
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names NDP603AL
NDP603AL



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