NDP4060

MOSFET N-Channel FET Enhancement Mode

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SeekIC No. : 00161684 Detail

NDP4060: MOSFET N-Channel FET Enhancement Mode

floor Price/Ceiling Price

Part Number:
NDP4060
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/1/9

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 60 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 15 A
Resistance Drain-Source RDS (on) : 0.1 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-220 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Packaging : Tube
Package / Case : TO-220
Continuous Drain Current : 15 A
Drain-Source Breakdown Voltage : 60 V
Resistance Drain-Source RDS (on) : 0.1 Ohms


Features:

`15A, 50V. RDS(ON) = 0.10 @ VGS=10V.
`Critical DC electrical parameters specified at elevated temperature.
`Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
`175°C maximum junction temperature rating.
`High density cell design for extremely low RDS(ON).
`TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications.
 


Specifications

Symbol
Parameter
NDP4050
NDB4050
Units
VDSS
Drain-Source Voltage
60
V
VDGR
Drain-Gate Voltage (RGS 1 MW)
60
V
VGSS
Gate-Source Voltage - Continuous
- Nonrepetitive (tP < 50 µs)
± 20
V
± 40
ID
Drain Current - Continuous
- Pulsed
± 15
A
± 45
PD
Total Power Dissipation
Derate above 25°C
50
W
0.33
W/
TJ,TSTG
Operating and Storage Temperature Range
-65 to 175
TL
Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds
275



Description

These N-Channel enhancement mode power field effect transistors NDP4060 are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. NDP4060 is particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.




Parameters:

Technical/Catalog InformationNDP4060
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25° C15A
Rds On (Max) @ Id, Vgs100 mOhm @ 7.5A, 10V
Input Capacitance (Ciss) @ Vds 450pF @ 25V
Power - Max50W
PackagingTube
Gate Charge (Qg) @ Vgs17nC @ 10V
Package / CaseTO-220
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names NDP4060
NDP4060



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