NDP4050

Packaging :
Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Package / Case : TO-220
Continuous Drain Current : 15 A
Drain-Source Breakdown Voltage : 50 V
Resistance Drain-Source RDS (on) : 0.1 Ohms


Features:

`15A, 50V. R<sub>DS(ON)</sub> = 0.10 @ V<sub>GS</sub>=10V.
`Critical DC electrical parameters specified at elevated temperature.
`Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
`175°C maximum junction temperature rating.
`High density cell design for extremely low R<sub>DS(ON)</sub>.
`TO-220 and TO-263 (D²PAK) package for both through hole and surface mount applications.


Specifications

Symbol	Parameter	NDP4050	NDB4050	Units
VDSS	Drain-Source Voltage	50		V
VDGR	Drain-Gate Voltage (RGS < 1 MW)	50		V
VGSS	Gate-Source Voltage - Continuous - Nonrepetitive (tP 50 µs)	± 20		V
		± 40
ID	Drain Current - Continuous - Pulsed	± 15		A
		± 45
PD	Total Power Dissipation Derate above 25°C	50		W
		0.33		W/
TJ,TSTG	Operating and Storage Temperature Range	-65 to 175
TL	Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds	275

Description

These N-Channel enhancement mode power field effect transistors NDP4050 are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. NDP4050 is particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.

Parameters:

Technical/Catalog Information	NDP4050
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	50V
Current - Continuous Drain (Id) @ 25° C	15A
Rds On (Max) @ Id, Vgs	100 mOhm @ 7.5A, 10V
Input Capacitance (Ciss) @ Vds	450pF @ 25V
Power - Max	50W
Packaging	Tube
Gate Charge (Qg) @ Vgs	17nC @ 10V
Package / Case	TO-220
FET Feature	Standard
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	NDP4050 NDP4050