NDP4050L

MOSFET N-Channel FET LL Enhancement

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SeekIC No. : 00166527 Detail

NDP4050L: MOSFET N-Channel FET LL Enhancement

floor Price/Ceiling Price

Part Number:
NDP4050L
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/1/9

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 50 V
Gate-Source Breakdown Voltage : +/- 16 V Continuous Drain Current : 15 A
Resistance Drain-Source RDS (on) : 0.085 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-220 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Packaging : Tube
Package / Case : TO-220
Continuous Drain Current : 15 A
Gate-Source Breakdown Voltage : +/- 16 V
Drain-Source Breakdown Voltage : 50 V
Resistance Drain-Source RDS (on) : 0.085 Ohms


Features:

·15A, 50V. RDS(ON) = 0.1W @ VGS = 5V
·Low drive requirements allowing operation directly from logic drivers. VGS(TH) < 2.0V.
·Critical DC electrical parameters specified at elevated temperature.
·Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
·175°C maximum junction temperature rating.
·High density cell design for extremely low RDS(ON).
·TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications.



Specifications

Symbol
Parameter
NDP4050L
NDB4050L
Units
VDSS Drain-Source Voltage
50
V
VDGR Drain-Gate Voltage (RGS 1 M)
50
V
VGSS Gate-Source Voltage - Continuous
- Nonrepetitive (tP < 50 µs)
± 16
V
± 25
ID Drain Current - Continuous
- Pulsed
15
A
45
PD Total Power Dissipation @ TC = 25°C
Derate above 25°C
50
W
0.33
W/
TJ,TSTG Operating and Storage Temperature Range
-65 to 175
TL Maximum lead temperature for soldering
purposes, 1/8" from case for 5 seconds
275



Description

These logic level N-Channel enhancement mode power field effect transistors NDP4050L are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. NDP4050L is particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.




Parameters:

Technical/Catalog InformationNDP4050L
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)50V
Current - Continuous Drain (Id) @ 25° C15A
Rds On (Max) @ Id, Vgs80 mOhm @ 15A, 10V
Input Capacitance (Ciss) @ Vds 600pF @ 25V
Power - Max50W
PackagingTube
Gate Charge (Qg) @ Vgs17nC @ 5V
Package / CaseTO-220
FET FeatureLogic Level Gate
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names NDP4050L
NDP4050L



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