NDC7003P

MOSFET Dual P-Ch FET Enhancement Mode

product image

NDC7003P Picture
SeekIC No. : 00147782 Detail

NDC7003P: MOSFET Dual P-Ch FET Enhancement Mode

floor Price/Ceiling Price

US $ .14~.25 / Piece | Get Latest Price
Part Number:
NDC7003P
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $.25
  • $.21
  • $.18
  • $.14
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
View more price & deliveries
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2025/1/9

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : - 60 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 0.34 A
Resistance Drain-Source RDS (on) : 1.2 Ohms Configuration : Dual
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SSOT-6 Packaging : Reel    

Description

Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Configuration : Dual
Drain-Source Breakdown Voltage : - 60 V
Package / Case : SSOT-6
Resistance Drain-Source RDS (on) : 1.2 Ohms
Continuous Drain Current : 0.34 A


Features:

`-0.34A, -50V. RDS(ON)= 5 @ VGS=-10V.
`High density cell design for low RDS(ON).
`Proprietary SuperSOTTM-6 package design using copper lead frame for superior thermal and electrical capabilities.
`High saturation current.



Pinout

  Connection Diagram


Specifications

Symbol
Parameter
NDC7003P
Units
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage - Continuous
-50
-20
-0.34
-1
0.96
0.9
0.7
-55 to 150
V
V
A

W


°C
ID
Drain Current Continuous Pulsed (Note 1a)
PD
Maximum Power Dissipation (Note 1a)
(Note 1b)
(Note 1c)
TJ,TSTG Operating and Storage Junction Temperature Range
THERMAL CHARACTERISTICS
RJA
RJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)

130
60

°C/W
°C/W



Description

These dual P-Channel enhancement mode power field effect transistors NDC7003P are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance, provide rugged and reliable performance and fast switching. NDC7003P is particularly suited to low voltage applications requiring a low current high side switch.




Parameters:

Technical/Catalog InformationNDC7003P
VendorFairchild Semiconductor (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET Polarity2 P-Channel (Dual)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25° C340mA
Rds On (Max) @ Id, Vgs5 Ohm @ 340mA, 10V
Input Capacitance (Ciss) @ Vds 66pF @ 25V
Power - Max700mW
PackagingDigi-Reel?
Gate Charge (Qg) @ Vgs2.2nC @ 10V
Package / CaseSuperSOT-6
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names NDC7003P
NDC7003P
NDC7003PDKR ND
NDC7003PDKRND
NDC7003PDKR



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
Fans, Thermal Management
Computers, Office - Components, Accessories
Undefined Category
Audio Products
Optoelectronics
Cables, Wires - Management
View more