NAND512W3A2DN6E

IC FLASH 512MBIT 48TSOP

product image

NAND512W3A2DN6E Picture
SeekIC No. : 003558572 Detail

NAND512W3A2DN6E: IC FLASH 512MBIT 48TSOP

floor Price/Ceiling Price

Part Number:
NAND512W3A2DN6E
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/12/24

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Series: - Manufacturer: Micron Technology Inc
Format - Memory: FLASH Available Set Gain : 5.9 dB
Memory Type: FLASH - NAND Memory Size: 512M (64M x 8)
Speed: - Interface: Parallel
Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C
Package / Case: 48-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 48-TSOP (12x20)    

Description

Series: -
Operating Temperature: -40°C ~ 85°C
Format - Memory: FLASH
Voltage - Supply: 2.7 V ~ 3.6 V
Interface: Parallel
Packaging: Tray
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 48-TSOP (12x20)
Memory Size: 512M (64M x 8)
Manufacturer: Micron Technology Inc
Speed: -
Memory Type: FLASH - NAND


Description

The NAND512W3A2DN6E is designed as one kind of non-volatile Flash memory device that uses the Single Level Cell (SLC) NAND cell technology and features an open-drain Ready/Busy output that can be used to identify if the Program / Erase / Read (P/E/R) Controller is currently active.

Features of the NAND512W3A2DN6E are:(1)high density nand flash memories: up to 1 Gbit memory array and up to 32 Mbit spare area and cost effective solutions for mass storage applications;(2)NAND interface: x8 or x16 bus width and Multiplexed Address/ Data and Pinout compatibility for all densities;(3)status register;(4)electronic signature;(5)chip enable "don't care" option - simple interface with microcontroller;(6)serial number option;(7)hardware data protection - program/erase locked during power transitions.etc.

The absolute maximum ratings of the NAND512W3A2DN6E can be summarized as:(1)Temperature Under Bias: -50 to 125 °C;(2)Storage Temperature: -65 to 150 °C;(3)Input or Output Voltage (1.8V devices): -0.6 to 2.7 V;(4)Input or Output Voltage (3V devices): -0.6 to 4.6 V;(5)Supply Voltage (1.8V devices): -0.6 to 2.7 V;(6)Supply Voltage (3 V devices): -0.6 to 4.6 V. If you want to know more information such as the electrical characteristics about the NAND512W3A2DN6E, please download the datasheet in www.seekic.com or www.chinaicmart.com.




Parameters:

Technical/Catalog InformationNAND512W3A2DN6E
VendorNumonyx/ST Micro
CategoryIntegrated Circuits (ICs)
Memory TypeFLASH - Nand
Memory Size512M (64M x 8)
Speed-
InterfaceParallel
Package / Case48-TSOP
PackagingTray
Voltage - Supply2.7 V ~ 3.6 V
Operating Temperature-40°C ~ 85°C
Format - MemoryFLASH
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names NAND512W3A2DN6E
NAND512W3A2DN6E



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
Cables, Wires
Discrete Semiconductor Products
Resistors
Sensors, Transducers
Integrated Circuits (ICs)
View more