IC FLASH 512MBIT 48TSOP
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Series: | - | Manufacturer: | Micron Technology Inc | ||
Format - Memory: | FLASH | Available Set Gain : | 5.9 dB | ||
Memory Type: | FLASH - NAND | Memory Size: | 512M (64M x 8) | ||
Speed: | - | Interface: | Parallel | ||
Voltage - Supply: | 2.7 V ~ 3.6 V | Operating Temperature: | -40°C ~ 85°C | ||
Package / Case: | 48-TFSOP (0.724", 18.40mm Width) | Supplier Device Package: | 48-TSOP (12x20) |
The NAND512W3A2DN6E is designed as one kind of non-volatile Flash memory device that uses the Single Level Cell (SLC) NAND cell technology and features an open-drain Ready/Busy output that can be used to identify if the Program / Erase / Read (P/E/R) Controller is currently active.
Features of the NAND512W3A2DN6E are:(1)high density nand flash memories: up to 1 Gbit memory array and up to 32 Mbit spare area and cost effective solutions for mass storage applications;(2)NAND interface: x8 or x16 bus width and Multiplexed Address/ Data and Pinout compatibility for all densities;(3)status register;(4)electronic signature;(5)chip enable "don't care" option - simple interface with microcontroller;(6)serial number option;(7)hardware data protection - program/erase locked during power transitions.etc.
The absolute maximum ratings of the NAND512W3A2DN6E can be summarized as:(1)Temperature Under Bias: -50 to 125 °C;(2)Storage Temperature: -65 to 150 °C;(3)Input or Output Voltage (1.8V devices): -0.6 to 2.7 V;(4)Input or Output Voltage (3V devices): -0.6 to 4.6 V;(5)Supply Voltage (1.8V devices): -0.6 to 2.7 V;(6)Supply Voltage (3 V devices): -0.6 to 4.6 V. If you want to know more information such as the electrical characteristics about the NAND512W3A2DN6E, please download the datasheet in www.seekic.com or www.chinaicmart.com.
Technical/Catalog Information | NAND512W3A2DN6E |
Vendor | Numonyx/ST Micro |
Category | Integrated Circuits (ICs) |
Memory Type | FLASH - Nand |
Memory Size | 512M (64M x 8) |
Speed | - |
Interface | Parallel |
Package / Case | 48-TSOP |
Packaging | Tray |
Voltage - Supply | 2.7 V ~ 3.6 V |
Operating Temperature | -40°C ~ 85°C |
Format - Memory | FLASH |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | NAND512W3A2DN6E NAND512W3A2DN6E |