NAND01G-A

Note: 1. Minimum Voltage may undershoot to 2V for less than 20ns during transitions on input and I/O pins. Maximum voltage may overshoot to V_DD + 2V for less than 20ns during transitions on I/O pins.

The NAND Flash 528 Byte/ 264 Word Page is a family of non-volatile Flash memories that uses the Single Level Cell (SLC) NAND cell technology. NAND01G-A is referred to as the Small Page family. The NAND01G-A devices range from 128Mbits to 1Gbit and operate with either a 1.8V or 3V voltage supply. The size of a Page is either 528 Bytes (512 + 16 spare) or 264 Words (256 + 8 spare) depending on whether the device has a x8 or x16 bus width.

The address lines of NAND01G-A are multiplexed with the Data In-put/Output signals on a multiplexed x8 or x16 In-put/Output bus. This interface reduces the pin count and makes it possible to migrate to other densities without changing the footprint.

Each NAND01G-A block can be programmed and erased over 100,000 cycles. To extend the lifetime of NAND Flash devices it is strongly recommended to implement an Error Correction Code (ECC). A Write Protect pin is available to give a hardware protection against program and erase operations.

The NAND01G-A devices feature an open-drain Ready/Busy output that can be used to identify if the Program/Erase/Read (P/E/R) Controller is currently active.The use of an open-drain output allows the Ready/Busy pins from several memories to be connected to a single pull-up resistor.A Copy Back command is available to optimize the management of defective blocks. When a Page Program operation fails, the data can be programmed in another page without having to resend the data to be programmed