NAND08GW3B2A

Features: High density NAND Flash Memory up to 8 Gbit memory array Up to 256 Mbit spare area Cost effective solution for mass storage applications NAND Interface x8 bus width Multiplexed Address/ Data Supply voltage 3.0V device: VDD = 2.7 to 3.6V Page size (2048 + 64 spare) Bytes Block size (128K...

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SeekIC No. : 004432676 Detail

NAND08GW3B2A: Features: High density NAND Flash Memory up to 8 Gbit memory array Up to 256 Mbit spare area Cost effective solution for mass storage applications NAND Interface x8 bus width Multiplexed Address/ D...

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Part Number:
NAND08GW3B2A
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/6/7

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Product Details

Description



Features:

High density NAND Flash Memory
up to 8 Gbit memory array
Up to 256 Mbit spare area
Cost effective solution for mass storage applications
NAND Interface
x8 bus width
Multiplexed Address/ Data
Supply voltage
3.0V device: VDD = 2.7 to 3.6V
Page size
(2048 + 64 spare) Bytes
Block size
(128K + 4K spare) Bytes
Page Read/Program
Random access: 25s (max)
Sequential access: 30ns (min)
Page program time: 200s (typ)
Copy Back Program mode
Fast page copy without external buffering
Cache Program and Cache Read modes
Internal Cache Register to improve the program and read throughputs
Fast Block Erase
Block erase time: 2ms (typ)
Status Register
Electronic Signature
Chip Enable 'don't care'
for simple interface with microcontroller
Serial Number option
Data protection
Hardware and Software Block Locking
Hardware Program/Erase locked during Power transitions
Data integrity
100,000 Program/Erase cycles
10 years Data Retention
ECOPACK® package
Development tools
Error Correction Code software and
hardware models
Bad Blocks Management and Wear Leveling algorithms
File System OS Native reference software
Hardware simulation models




Pinout

  Connection Diagram


Specifications

Symbol Parameter Value Unit
Min Max
TBIAS Temperature Under Bias -50 125 °C
TSTG Storage Temperature -65 150 °C
VIO(1) Input or Output Voltage 0.6 4.6 V
VDD Supply Voltage 0.6 4.6 V



Description

The NAND Flash 2112 Byte/ 1056 Word Page is a family of non-volatile Flash memories that uses NAND cell technology. The NAND04GW3B2B and NAND08GW3B2A have a density of 4 Gbits and 8 Gbits, respectively. They operate from a 3V voltage supply. The size of a Page is 2112 Bytes (2048 + 64 spare).

The address lines of NAND04GW3B2B and NAND08GW3B2A are multiplexed with the Data Input/Output signals on a multiplexed x8 Input/Output bus. This interface reduces the pin count and makes it possible to migrate to other densities without changing the footprint.

Each NAND04GW3B2B and NAND08GW3B2A block can be programmed and erased over 100,000 cycles. To extend the lifetime of NAND Flash devices it is strongly recommended to implement an Error Correction Code (ECC).

The NAND04GW3B2B and NAND08GW3B2A device has hardware and software security features:

A Write Protect pin is available to give a hardware protection against program and erase operations.
A Block Locking scheme is available to provide user code and/or data protection.

The NAND04GW3B2B and NAND08GW3B2A device features an open-drain Ready/Busy output that can be used to identify if the Program/Erase/Read (P/E/R) Controller is currently active. The use of an open-drain output allows the Ready/Busy pins from several memories to be connected to a single pull-up resistor.

A Copy Back Program command is available to optimize the management of defective blocks. When a Page Program operation fails, the data can be programmed in another page without having to resend the data to be programmed.The NAND04GW3B2B and NAND08GW3B2A have Cache Program and Cache Read features which improve the program and read throughputs for large files. During Cache Programming, the device loads the data in a Cache Register while the previous data is transferred to the Page Buffer and programmed into the memory array. During Cache Reading, the device loads the data in a Cache Register while the previous data is transferred to the I/O Buffers to be read.

The NAND04GW3B2B and NAND08GW3B2A device has the Chip Enable Don't Care feature, which allows code to be directly downloaded by a microcontroller, as Chip Enable transitions during the latency time do not stop the read operation.

The NAND04GW3B2B and NAND08GW3B2A  devices have the option of a Unique Identifier (serial number), which allows each device to be uniquely identified.The Unique Identifier options is subject to an NDA (Non Disclosure Agreement) and so not described in the datasheet. For more details of this option contact your nearest ST Sales office.

The NAND04GW3B2B and NAND08GW3B2A device is available in a TSOP48 (12 x 20mm) package. In order to meet environmental requirements, ST offers the NAND04GW3B2B and NAND08GW3B2A in ECOPACK® package. ECOPACK packages are Lead-free. The category of second Level Interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark.




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