Position: Home  > All Categories> Integrated Circuits (ICs) > NAND01G-B2B

NAND01G-B2B

Features: High Density NAND Flash memories Up to 2 Gbit memory array Up to 64Mbit spare area Cost effective solutions for mass storage applications NAND interface x8 or x16 bus width Multiplexed Address/ Data Pinout compatibility for all densities Supply voltage 1.8V device: VDD = 1.7 to 1...

product image

NAND01G-B2B Picture
See larger image
SeekIC No. : 004432666 Detail

NAND01G-B2B: Features: High Density NAND Flash memories Up to 2 Gbit memory array Up to 64Mbit spare area Cost effective solutions for mass storage applications NAND interface x8 or x16 bus width Multiplex...

NAND01G-B2B Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
NAND01G-B2B
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/12/24

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

High Density NAND Flash memories
  Up to 2 Gbit memory array
  Up to 64Mbit spare area
  Cost effective solutions for mass storage applications
NAND interface
  x8 or x16 bus width
  Multiplexed Address/ Data
  Pinout compatibility for all densities
Supply voltage
  1.8V device: VDD = 1.7 to 1.95V
  3.0V device: VDD = 2.7 to 3.6V
Page size
  x8 device: (2048 + 64 spare) Bytes
  x16 device: (1024 + 32 spare) Words
Block size
  x8 device: (128K + 4K spare) Bytes
  x16 device: (64K + 2K spare) Words
Page Read/Program
  Random access: 25s (max)
  Sequential access: 30ns (min)
  Page program time: 200s (typ)
Copy Back Program mode
  Fast page copy without external buffering
Cache Program and Cache Read modes
  Internal Cache Register to improve the program and read throughputs
Fast Block Erase
  Block erase time: 2ms (typ)
Status Register
Electronic Signature
Chip Enable 'don't care'
  for simple interface with microcontroller
Serial Number option
Data protection
  Hardware Block Locking
  Hardware Program/Erase locked during Power transitions
Data integrity
  100,000 Program/Erase cycles
  10 years Data Retention
ECOPACK® packages
Development tools
  Error Correction Code software and hardware models
  Bad Blocks Management and Wear Leveling algorithms
  File System OS Native reference software
  Hardware simulation models


Specifications

Symbol Parameter Value Unit
Min Max
TBIAS Temperature Under Bias 50 125 °C
TSTG Storage Temperature 65 150 °C
VIO (1) Input or Output Voltage 1.8V devices 0.6 2.7 V
3 V devices 0.6 4.6 V
VDD Supply Voltage 1.8V devices 0.6 2.7 V
3 V devices 0.6 4.6 V
1. Minimum Voltage may undershoot to 2V for less than 20ns during transitions on input and I/O pins.
    Maximum voltage may overshoot to VDD + 2V for less than 20ns during transitions on I/O pins.


Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Capacitors
GRM188R71H103KA01D
GRM21BR71H104KA01L
Motors, Solenoids, Driver Boards/Modules
IHSS57-36-20
ASD-B2-1521-B
Potentiometers, Variable Resistors
RV24YN
WXD4-23-3W
Batteries, Chargers, Holders
ICR18650-28A
ICR18650-26F/h
Crystals and Oscillators
WT325BI0030.000000
2SB49
Inductors, Coils, Chokes
DR127-330-R
SD53-100-R
View more