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NAND01G-B

Features: High Density NAND Flash memories Up to 2 Gbit memory array Up to 64Mbit spare area Cost effective solutions for mass storage applications NAND interface x8 or x16 bus width Multiplexed Address/ Data Pinout compatibility for all densities Supply voltage 1.8V device: VDD = 1.7 to 1...

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SeekIC No. : 004432665 Detail

NAND01G-B: Features: High Density NAND Flash memories Up to 2 Gbit memory array Up to 64Mbit spare area Cost effective solutions for mass storage applications NAND interface x8 or x16 bus width Multiplex...

NAND01G-B Data Sheet

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Part Number:
NAND01G-B
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/24

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Product Details

Description



Features:

High Density NAND Flash memories
  Up to 2 Gbit memory array
  Up to 64Mbit spare area
  Cost effective solutions for mass storage applications
NAND interface
  x8 or x16 bus width
  Multiplexed Address/ Data
  Pinout compatibility for all densities
Supply voltage
  1.8V device: VDD = 1.7 to 1.95V
  3.0V device: VDD = 2.7 to 3.6V
Page size
  x8 device: (2048 + 64 spare) Bytes
  x16 device: (1024 + 32 spare) Words
Block size
  x8 device: (128K + 4K spare) Bytes
  x16 device: (64K + 2K spare) Words
Page Read/Program
  Random access: 25s (max)
  Sequential access: 50ns (min)
  Page program time: 300s (typ)
Copy Back Program mode
  Fast page copy without external buffering
Cache Program and Cache Read modes
  Internal Cache Register to improve the program and read throughputs
Fast Block Erase
  Block erase time: 2ms (typ)
Status Register
Electronic Signature
Chip Enable 'don't care'
  for simple interface with microcontroller
Serial Number option
Data protection
  Hardware and Software Block Locking
  Hardware Program/Erase locked during Power transitions
Data integrity
  100,000 Program/Erase cycles
  10 years Data Retention
ECOPACK® packages
Development tools
  Error Correction Code software and hardware models
  Bad Blocks Management and Wear Leveling algorithms
  File System OS Native reference software
  Hardware simulation models


Specifications

Symbol Parameter Value Unit
Min Max
TBIAS Temperature Under Bias 50 125 °C
TSTG Storage Temperature 65 150 °C
VIO (1) Input or Output Voltage 1.8V devices 0.6 2.7 V
3 V devices 0.6 4.6 V
VDD Supply Voltage 1.8V devices 0.6 2.7 V
3 V devices 0.6 4.6 V
1. Minimum Voltage may undershoot to 2V for less than 20ns during transitions on input and I/O pins.
    Maximum voltage may overshoot to VDD + 2V for less than 20ns during transitions on I/O pins.


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